Nano Cmos And Post Cmos Electronics
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Author | : Saraju P. Mohanty |
Publisher | : Institution of Engineering and Technology |
Total Pages | : 352 |
Release | : 2016-04-15 |
Genre | : Technology & Engineering |
ISBN | : 9781849199988 |
The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
Author | : Saraju P. Mohanty |
Publisher | : IET |
Total Pages | : 439 |
Release | : 2016-04-28 |
Genre | : Technology & Engineering |
ISBN | : 184919999X |
Continuing from volume 1, this volume outlines circuit- and system-level design approaches and issues for these devices. Topics covered include self-healing analog/RF circuits; on-chip gate delay variability measurement in scaled technology; FinFET SRAM circuits; nanoscale FinFET devices for PVT aware SRAM; low leakage variability aware CMOS logic circuits; thermal effects in MWCNT VLSI interconnects; an accurate PVT-aware statistical logic library for nano-CMOS integrated circuits; SPICEless RTL design optimization of nano-electronic digital integrated circuits; power-delay trade-off driven optimal scheduling of CDFGs during high level synthesis; green on-chip inductors for three-dimensional integrated circuits; 3D NoC -- a promising alternative for tomorrow's nano-system design; and DNA computing.
Author | : Vinod Kumar Khanna |
Publisher | : Springer |
Total Pages | : 471 |
Release | : 2016-09-16 |
Genre | : Technology & Engineering |
ISBN | : 8132236254 |
Keeping nanoelectronics in focus, this book looks at interrelated fields namely nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology, that go hand-in-hand or are likely to be utilized in future in various ways for backing up or strengthening nanoelectronics. Complementary nanosciences refer to the alternative nanosciences that can be combined with nanoelectronics. The book brings students and researchers from multiple disciplines (and therefore with disparate levels of knowledge, and, more importantly, lacunae in this knowledge) together and to expose them to the essentials of integrative nanosciences. The central idea is that the five identified disciplines overlap significantly and arguably cohere into one fundamental nanotechnology discipline. The book caters to interdisciplinary readership in contrast to many of the existing nanotechnology related books that relate to a specific discipline. The book lays special emphasis on nanoelectronics since this field has advanced most rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and their interrelationship in this book are of considerable interest and immense value to students, professional engineers, and reserachers.
Author | : Rohit Dhiman |
Publisher | : Institution of Engineering and Technology |
Total Pages | : 409 |
Release | : 2019-09-30 |
Genre | : Technology & Engineering |
ISBN | : 1839530537 |
VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.
Author | : Saraju P. Mohanty |
Publisher | : IET |
Total Pages | : 383 |
Release | : 2016-04-12 |
Genre | : Technology & Engineering |
ISBN | : 1849199973 |
Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
Author | : Muhammad Mustafa Hussain |
Publisher | : John Wiley & Sons |
Total Pages | : 284 |
Release | : 2019-01-04 |
Genre | : Technology & Engineering |
ISBN | : 352734358X |
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Author | : Masayoshi Esashi |
Publisher | : John Wiley & Sons |
Total Pages | : 528 |
Release | : 2021-03-16 |
Genre | : Technology & Engineering |
ISBN | : 3527823255 |
Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.
Author | : R. Jacob Baker |
Publisher | : John Wiley & Sons |
Total Pages | : 1074 |
Release | : 2008 |
Genre | : Technology & Engineering |
ISBN | : 0470229411 |
This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Author | : Saraju P. Mohanty |
Publisher | : |
Total Pages | : 422 |
Release | : 2016 |
Genre | : TECHNOLOGY & ENGINEERING |
ISBN | : 9781523103171 |
Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
Author | : Rohit Dhiman |
Publisher | : CRC Press |
Total Pages | : 255 |
Release | : 2022-11-23 |
Genre | : Technology & Engineering |
ISBN | : 1000778061 |
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.