Mosfet Modeling For Circuit Analysis And Design
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| Author | : Carlos Galup-Montoro |
| Publisher | : World Scientific |
| Total Pages | : 445 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568107 |
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
| Author | : Carlos Galup-Montoro |
| Publisher | : World Scientific |
| Total Pages | : 445 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568107 |
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
| Author | : Narain Arora |
| Publisher | : World Scientific |
| Total Pages | : 633 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9812707581 |
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
| Author | : Márcio Cherem Schneider |
| Publisher | : Cambridge University Press |
| Total Pages | : 505 |
| Release | : 2010-01-28 |
| Genre | : Technology & Engineering |
| ISBN | : 1139483692 |
Covering the essentials of analog circuit design, this book takes a unique design approach based on a MOSFET model valid for all operating regions, rather than the standard square-law model. Opening chapters focus on device modeling, integrated circuit technology, and layout, whilst later chapters go on to cover noise and mismatch, and analysis and design of the basic building blocks of analog circuits, such as current mirrors, voltage references, voltage amplifiers, and operational amplifiers. An introduction to continuous-time filters is also provided, as are the basic principles of sampled-data circuits, especially switched-capacitor circuits. The final chapter then reviews MOSFET models and describes techniques to extract design parameters. With numerous design examples and exercises also included, this is ideal for students taking analog CMOS design courses and also for circuit designers who need to shorten the design cycle.
| Author | : Narain D. Arora |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 628 |
| Release | : 2012-12-06 |
| Genre | : Computers |
| ISBN | : 3709192471 |
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
| Author | : Juin Jei Liou |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 372 |
| Release | : 1998-09-30 |
| Genre | : Science |
| ISBN | : 9780412146015 |
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
| Author | : Juin Jei Liou |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 356 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461554152 |
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
| Author | : Dileep A. Divekar |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 192 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461316871 |
Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc.
| Author | : Márcio Cherem Schneider |
| Publisher | : Cambridge University Press |
| Total Pages | : 505 |
| Release | : 2010-01-28 |
| Genre | : Computers |
| ISBN | : 052111036X |
The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
| Author | : Patrick T. Chuang |
| Publisher | : |
| Total Pages | : |
| Release | : 1975 |
| Genre | : |
| ISBN | : |
