Morphology Of Aluminium Gallium Nitride And Indium Gallium Nitride Alloys
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| Author | : Victor Bellitto |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 272 |
| Release | : 2012-03-23 |
| Genre | : Science |
| ISBN | : 9535104144 |
With the advent of the atomic force microscope (AFM) came an extremely valuable analytical resource and technique useful for the qualitative and quantitative surface analysis with sub-nanometer resolution. In addition, samples studied with an AFM do not require any special pretreatments that may alter or damage the sample and permits a three dimensional investigation of the surface. This book presents a collection of current research from scientists throughout the world that employ atomic force microscopy in their investigations. The technique has become widely accepted and used in obtaining valuable data in a wide variety of fields. It is impressive to see how, in a short time period since its development in 1986, it has proliferated and found many uses throughout manufacturing, research and development.
| Author | : Timothy David Veal |
| Publisher | : CRC Press |
| Total Pages | : 707 |
| Release | : 2011-06-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1439859612 |
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
| Author | : Stephen J. Pearton |
| Publisher | : CRC Press |
| Total Pages | : 556 |
| Release | : 2021-10-08 |
| Genre | : Science |
| ISBN | : 1000448428 |
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
| Author | : J. Mirecki Millunchick |
| Publisher | : Mrs Proceedings |
| Total Pages | : 360 |
| Release | : 2000-10-18 |
| Genre | : Science |
| ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
| Author | : Mool C. Gupta |
| Publisher | : CRC Press |
| Total Pages | : 1040 |
| Release | : 2018-10-03 |
| Genre | : Science |
| ISBN | : 1420004697 |
Reflecting changes in the field in the ten years since the publication of the first edition, The Handbook of Photonics, Second Edition explores recent advances that have affected this technology. In this new, updated second edition editor Mool Gupta is joined by John Ballato, strengthening the handbook with their combined knowledge and the continued contributions of world-class researchers. New in the Second Edition: Information on optical fiber technology and the economic impact of photonics Coverage of emerging technologies in nanotechnology Sections on optical amplifiers, and polymeric optical materials The book covers photonics materials, devices, and systems, respectively. An introductory chapter, new to this edition, provides an overview of photonics technology, innovation, and economic development. Resting firmly on the foundation set by the first edition, this new edition continues to serve as a source for introductory material and a collection of published data for research and training in this field, making it the reference of first resort.
| Author | : Jian-Jang Huang |
| Publisher | : Woodhead Publishing |
| Total Pages | : 673 |
| Release | : 2014-02-14 |
| Genre | : Technology & Engineering |
| ISBN | : 0857099302 |
The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
| Author | : Klaus D. Sattler |
| Publisher | : CRC Press |
| Total Pages | : 465 |
| Release | : 2020-11-26 |
| Genre | : Technology & Engineering |
| ISBN | : 1000702502 |
21st Century Nanoscience - A Handbook: Nanophotonics, Nanoelectronics, and Nanoplasmonics (Volume 6) will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics by the same editor published in the fall of 2010 and was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. This sixth volume in a ten-volume set covers nanophotonics, nanoelectronics, and nanoplasmonics. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanophysics extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
| Author | : Bernard Gil |
| Publisher | : OUP Oxford |
| Total Pages | : 661 |
| Release | : 2013-08-22 |
| Genre | : Science |
| ISBN | : 0191503959 |
This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
| Author | : Mohamed Henini |
| Publisher | : Elsevier |
| Total Pages | : 790 |
| Release | : 2018-06-27 |
| Genre | : Science |
| ISBN | : 0128121378 |
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
| Author | : Jian-Jang Huang |
| Publisher | : Woodhead Publishing |
| Total Pages | : 826 |
| Release | : 2017-10-24 |
| Genre | : Technology & Engineering |
| ISBN | : 0081019432 |
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Features new chapters on laser lighting, addressing the latest advances on this topic - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting - Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
