Morphological and Optical Properties of Porous Gallium Nitride (GaN) Fabricated by Photoelectrochemical Process
Author | : Sook Fong Cheah |
Publisher | : |
Total Pages | : 208 |
Release | : 2015 |
Genre | : Gallium nitride |
ISBN | : |
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Author | : Sook Fong Cheah |
Publisher | : |
Total Pages | : 208 |
Release | : 2015 |
Genre | : Gallium nitride |
ISBN | : |
Author | : Cheah Sook Fong |
Publisher | : Penerbit USM |
Total Pages | : 100 |
Release | : 2017 |
Genre | : Science |
ISBN | : 9674611231 |
Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Author | : XiaoHu Wang |
Publisher | : |
Total Pages | : |
Release | : 2017-01-26 |
Genre | : |
ISBN | : 9781361268339 |
This dissertation, "Optical Studies of Focused Ion Beam Fabricated GaN Microstructures and Nanostructures" by Xiaohu, Wang, 王小虎, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: In this thesis, Gallium Nitride (GaN) micro- and nanostructures were fabricated based on focused ion beam (FIB) milling. The starting wafer is an epitaxial structure containing InGaN/GaN multi-quantum wells. High crystal quality structures such as the nano-cone, nanopillar array and single pillar were fabricated based on the FIB method. During the fabrication process, various approaches were designed to minimize FIB damage caused by Gallium ion bombardment. The fabrication process for nano-cone is a combination of mask preparation by FIB with subsequent reactive ion etching (RIE). For fabricating nanopillar arrays, the nanopillars were patterned directly using FIB with an optimized beam current followed by wet etching process to remove the damage. On the other hand, the single pillar is achieved by gradually decreasing the ion beam current as the diameter of the pillar becomes smaller. The first order Raman spectra for the nanopillar array reveal a strong additional peak when the diameter of the nanopillars is less than 220 nm. This peak can also be observed in GaN pillars without MQW and is clearly assigned to the surface optical (SO) mode originated from the A1 phonon in wurtzite GaN. The frequency of this SO mode is found to be sensitive with the diameter and surface roughness of the nanopillars. Temperature-variable photoluminescence (PL) measurements show that a broadband emission in the as-grown sample split into the two well-resolved bands for nanopillars and the emission band at the higher energy side quickly thermally quenched. Room temperature PL measurements on the single pillars exhibit an increasing blue-shift of the peak emission with the decreasing of the pillar diameter. Additional simulation data and excitation power dependent PL studies confirm the observation of strain relaxation in the pillar's MQW due to FIB fabrication. The temperature variable PL on the single pillar shows a monotonous blue shift as the temperature arises to 300 K. DOI: 10.5353/th_b4715342 Subjects: Microstructure - Optical properties Nanostructured materials - Optical properties Focused ion beams Gallium nitride
Author | : James H. Edgar |
Publisher | : Institution of Electrical Engineers |
Total Pages | : 692 |
Release | : 1999 |
Genre | : Technology & Engineering |
ISBN | : |
Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author | : Randall M. Feenstra |
Publisher | : John Wiley & Sons |
Total Pages | : 332 |
Release | : 2008-04-15 |
Genre | : Technology & Engineering |
ISBN | : 9780470751824 |
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Author | : Dirk Ehrentraut |
Publisher | : Springer Science & Business Media |
Total Pages | : 337 |
Release | : 2010-06-14 |
Genre | : Science |
ISBN | : 3642048307 |
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author | : Mohd Syamsul Nasyriq |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 256 |
Release | : 2020-03-10 |
Genre | : Technology & Engineering |
ISBN | : 3035736812 |
International Conference on Semiconductor Materials and Technology (ICoSeMT 2019, 29-30 April 2019, Penang, Malaysia) was an inaugural event organized by the Institute of Nano Optoelectronics Research and Technology (INOR) and Universiti Sains Malaysia (USM) in conjunction with the 50th Anniversary of USM. This volume presents for readers the collection of papers that were represented on this event and reflects the modern trends in the area of materials science and technologies for opto- and microelectronics, photovoltaic systems, and photocatalysis, in analyze properties of modern functional materials, polymers, and composites. This collection will be useful for specialists from many branches of modern manufacture.
Author | : Michael Shur |
Publisher | : World Scientific |
Total Pages | : 310 |
Release | : 2004 |
Genre | : Technology & Engineering |
ISBN | : 9789812562364 |
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author | : Zhebo Chen |
Publisher | : Springer Science & Business Media |
Total Pages | : 130 |
Release | : 2013-08-28 |
Genre | : Science |
ISBN | : 1461482984 |
This book outlines many of the techniques involved in materials development and characterization for photoelectrochemical (PEC) – for example, proper metrics for describing material performance, how to assemble testing cells and prepare materials for assessment of their properties, and how to perform the experimental measurements needed to achieve reliable results towards better scientific understanding. For each technique, proper procedure, benefits, limitations, and data interpretation are discussed. Consolidating this information in a short, accessible, and easy to read reference guide will allow researchers to more rapidly immerse themselves into PEC research and also better compare their results against those of other researchers to better advance materials development. This book serves as a “how-to” guide for researchers engaged in or interested in engaging in the field of photoelectrochemical (PEC) water splitting. PEC water splitting is a rapidly growing field of research in which the goal is to develop materials which can absorb the energy from sunlight to drive electrochemical hydrogen production from the splitting of water. The substantial complexity in the scientific understanding and experimental protocols needed to sufficiently pursue accurate and reliable materials development means that a large need exists to consolidate and standardize the most common methods utilized by researchers in this field.