Modeling And Simulation For Rf System Design
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| Author | : Ronny Frevert |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 296 |
| Release | : 2006-06-28 |
| Genre | : Technology & Engineering |
| ISBN | : 0387275851 |
Modern telecommunication systems are highly complex from an algorithmic point of view. The complexity continues to increase due to advanced modulation schemes, multiple protocols and standards, as well as additional functionality such as personal organizers or navigation aids. To have short and reliable design cycles, efficient verification methods and tools are necessary. Modeling and simulation need to accompany the design steps from the specification to the overall system verification in order to bridge the gaps between system specification, system simulation, and circuit level simulation. Very high carrier frequencies together with long observation periods result in extremely large computation times and requires, therefore, specialized modeling methods and simulation tools on all design levels. The focus of Modeling and Simulation for RF System Design lies on RF specific modeling and simulation methods and the consideration of system and circuit level descriptions. It contains application-oriented training material for RF designers which combines the presentation of a mixed-signal design flow, an introduction into the powerful standardized hardware description languages VHDL-AMS and Verilog-A, and the application of commercially available simulators. Modeling and Simulation for RF System Design is addressed to graduate students and industrial professionals who are engaged in communication system design and want to gain insight into the system structure by own simulation experiences. The authors are experts in design, modeling and simulation of communication systems engaged at the Nokia Research Center (Bochum, Germany) and the Fraunhofer Institute for Integrated Circuits, Branch Lab Design Automation (Dresden, Germany).
| Author | : Ronny Frevert |
| Publisher | : Springer |
| Total Pages | : 0 |
| Release | : 2008-11-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9780387508351 |
Modern telecommunication systems are highly complex from an algorithmic point of view. The complexity continues to increase due to advanced modulation schemes, multiple protocols and standards, as well as additional functionality such as personal organizers or navigation aids. To have short and reliable design cycles, efficient verification methods and tools are necessary. Modeling and simulation need to accompany the design steps from the specification to the overall system verification in order to bridge the gaps between system specification, system simulation, and circuit level simulation. Very high carrier frequencies together with long observation periods result in extremely large computation times and requires, therefore, specialized modeling methods and simulation tools on all design levels. The focus of Modeling and Simulation for RF System Design lies on RF specific modeling and simulation methods and the consideration of system and circuit level descriptions. It contains application-oriented training material for RF designers which combines the presentation of a mixed-signal design flow, an introduction into the powerful standardized hardware description languages VHDL-AMS and Verilog-A, and the application of commercially available simulators. Modeling and Simulation for RF System Design is addressed to graduate students and industrial professionals who are engaged in communication system design and want to gain insight into the system structure by own simulation experiences. The authors are experts in design, modeling and simulation of communication systems engaged at the Nokia Research Center (Bochum, Germany) and the Fraunhofer Institute for Integrated Circuits, Branch Lab Design Automation (Dresden, Germany).
| Author | : Lydi Smaini |
| Publisher | : John Wiley & Sons |
| Total Pages | : 226 |
| Release | : 2012-09-04 |
| Genre | : Technology & Engineering |
| ISBN | : 1118438876 |
With the growing complexity of personal mobile communication systems demanding higher data-rates and high levels of integration using low-cost CMOS technology, overall system performance has become more sensitive to RF analog front-end impairments. Designing integrated transceivers requires a thorough understanding of the whole transceiver chain including RF analog front-end and digital baseband. Communication system engineers have to include RF analog imperfections in their simulation benches in order to study and quantify their impact on the system performance. Here the author explores key RF analog impairments in a transceiver and demonstrates how to model their impact from a communication system design view-point. He discusses the design aspects of the front end of transceivers (both receivers and transmitters) and provides the reader with a way to optimize a complex mixed-signal platform by taking into account the characteristics of the RF/analog front-end. Key features of this book include: Practical examples illustrated by system simulation results based on WiFi and mobile WiMAX OFDM transceivers An overview of the digital estimation and compensation of the RF analog impairments such as power amplifier distortion, quadrature imbalance, and carrier and sampling frequency offsets An exposition of the challenges involved in the design of both RF analog circuits and DSP communication circuits in deep submicron CMOS technology MATLAB® codes for RF analog impairments models hosted on the companion website Uniquely the book bridges the gap between RFIC design specification needs and communication systems simulation, offering readers RF analog impairments modeling knowledge and a comprehensive approach to unifying theory and practice in system modelling. It is of great value to communication systems and DSP engineers and graduate students who design communication processing engines, RF/analog systems and IC design engineers involved in the design of communication platforms.
| Author | : M. Jamal Deen |
| Publisher | : World Scientific |
| Total Pages | : 426 |
| Release | : 2002 |
| Genre | : Science |
| ISBN | : 9789810249052 |
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
| Author | : Alexandru Gabriel Gheorghe |
| Publisher | : CRC Press |
| Total Pages | : 212 |
| Release | : 2022-09-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1000794083 |
New Topics in Simulation and Modeling of RF Circuits addresses two main topics: simulation of RF circuits and new models of nonlinear power BAW resonators and filters.Since RF circuits have several unique features, and all analysis methods are based on the circuit essential properties, the book begins by describing the properties of RF circuits, characterization of circuits with customary and uncustomary behavior and some theorems of solutions existence and uniqueness for dynamic nonlinear circuits. Thereafter, the main time domain and frequency domain analysis methods for RF circuits are presented. The advantages and disadvantages of each method have been highlighted, and an algorithm for the time step choice in transient analysis based on energy balance errors is also presented. Lastly, the final part contains some nonlinear circuit models of power BAW resonators. The behavioral models for the time domain analysis are simple circuits containing weakly nonlinear elements. The behavioral models for frequency domain analysis are based on the measured values of the frequency dependent S parameters for a set of incident powers. S parameters corresponding to certain intermodulation products of practical interest are also considered. The physical models contain artificial transmission lines with nonlinear circuit elements corresponding to mechanical and electrical nonlinearities.
| Author | : William F. Egan |
| Publisher | : John Wiley & Sons |
| Total Pages | : 414 |
| Release | : 2004-03-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0471654086 |
The ultimate practical resource for today's RF system design professionals Radio frequency components and circuits form the backbone of today's mobile and satellite communications networks. Consequently, both practicing and aspiring industry professionals need to be able to solve ever more complex problems of RF design. Blending theoretical rigor with a wealth of practical expertise, Practical RF System Design addresses a variety of complex, real-world problems that system engineers are likely to encounter in today's burgeoning communications industry with solutions that are not easily available in the existing literature. The author, an expert in the field of RF module and system design, provides powerful techniques for analyzing real RF systems, with emphasis on some that are currently not well understood. Combining theoretical results and models with examples, he challenges readers to address such practical issues as: * How standing wave ratio affects system gain * How noise on a local oscillator will affect receiver noise figure and desensitization * How to determine the dynamic range of a cascade from module specifications * How phase noise affects system performance and where it comes from * How intermodulation products (IMs) predictably change with signal amplitude, and why they sometimes change differently An essential resource for today's RF system engineers, the text covers important topics in the areas of system noise and nonlinearity, frequency conversion, and phase noise. Along with a wealth of practical examples using MATLAB(r) and Excel, spreadsheets are available for download from an FTP Web site to help readers apply the methods outlined in this important resource.
| Author | : Abdullah Eroglu |
| Publisher | : CRC Press |
| Total Pages | : 289 |
| Release | : 2018-09-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1351831186 |
Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new types of reflectometers Presents RF filter designs for power amplifiers as well as application examples of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.
| Author | : Slawomir Koziel |
| Publisher | : World Scientific |
| Total Pages | : 467 |
| Release | : 2022-03-04 |
| Genre | : Technology & Engineering |
| ISBN | : 1800610769 |
Contemporary high-frequency engineering design heavily relies on full-wave electromagnetic (EM) analysis. This is primarily due to its versatility and ability to account for phenomena that are important from the point of view of system performance. Unfortunately, versatility comes at the price of a high computational cost of accurate evaluation. Consequently, utilization of simulation models in the design processes is challenging although highly desirable. The aforementioned problems can be alleviated by means of surrogate modeling techniques, the most popular of which are data-driven models. Although a large variety of methods are available, they are all affected by the curse of dimensionality. This is especially pronounced in high-frequency electronics, where typical system responses are highly nonlinear. Construction of practically useful surrogates covering wide ranges of parameters and operating conditions is a considerable challenge.Surrogate Modeling for High-Frequency Design presents a selection of works representing recent advancements in surrogate modeling and their applications to high-frequency design. Some chapters provide a review of specific topics such as neural network modeling of microwave components, while others describe recent attempts to improve existing modeling methodologies. Furthermore, the book features numerous applications of surrogate modeling methodologies to design optimization and uncertainty quantification of antenna, microwave, and analog RF circuits.
| Author | : Yogesh Singh Chauhan |
| Publisher | : Elsevier |
| Total Pages | : 326 |
| Release | : 2024-08-30 |
| Genre | : Technology & Engineering |
| ISBN | : 0323958230 |
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more. Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG New to This Edition Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model Covers the most recent developments in the BSIM-CMG model Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction Includes a new chapter on cryogenic modeling
| Author | : Arvind Raghavan |
| Publisher | : John Wiley & Sons |
| Total Pages | : 224 |
| Release | : 2008-02-04 |
| Genre | : Technology & Engineering |
| ISBN | : 9780470228302 |
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
