Model Based Thermal Stress Control Of Lec Gaas Bulk Crystal Growth
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Crystal Growth
Author | : A. Lörinczy |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 927 |
Release | : 1991-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035708290 |
Proceedings of the 3rd European Conference on Crystal Growth, Budapest, Hungary, May 1991
Scientific and Technical Aerospace Reports
Author | : |
Publisher | : |
Total Pages | : 1460 |
Release | : 1991 |
Genre | : Aeronautics |
ISBN | : |
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Bulk Crystal Growth
Author | : D. T. J. Hurle |
Publisher | : Elsevier |
Total Pages | : 671 |
Release | : 2016-06-06 |
Genre | : Science |
ISBN | : 0444633073 |
Volume 2 is divided into 2 parts. Part A reviews the principal techniques used for bulk single crystal growth from melt, solution and vapour and for industrial mass crystallisation starting, in chapter 1, with nature's techniques. The growth of synthetic crystals of a wide range of materials for research and commercial use is covered in depth, with emphasis placed on those techniques which are of current importance: techniques of only historical interest have not been included. Part B covers the basic mechanisms and dynamics of melt and solution growth covering segregation, melt convection, stress in the cooling crystal, polyphase solidification, growth in gels, spherulitic crystallisation and the numerical modelling of Bridgman and Czochralski growth processes.
Crystal Growth
Author | : A.W. Vere |
Publisher | : Springer Science & Business Media |
Total Pages | : 267 |
Release | : 2013-06-29 |
Genre | : Science |
ISBN | : 1475798970 |
This book is the second in a series of scientific textbooks designed to cover advances in selected research fields from a basic and general viewpoint, so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semiconductor Materials has been the subject of numerous books and reviews and the fundamental principles are now well-established. We are concerned chiefly with the deposition of atoms onto a suitable surface - crystal growth - and the generation of faults in the atomic structure during growth and subsequent cooling to room temperature - crystal defect structure. In this book I have attempted to show that whilst the fundamentals of these processes are relatively simple, the complexities of the interactions involved and the individuality of different materials systems and growth processes have ensured that experimentally verifiable predictions from scientific principles have met with only limited success - good crystal growth remains an art. However, recent advances, which include the reduction of growth temperatures, the reduction or elimination of reactant transport variables and the use of better-controlled energy sources to promote specific reactions, are leading to simplified growth systems.
Fundamentals
Author | : D. T. J. Hurle |
Publisher | : Elsevier |
Total Pages | : 697 |
Release | : 2013-10-22 |
Genre | : Science |
ISBN | : 148329112X |
Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.
Materials Aspects of GaAs and InP Based Structures
Author | : V. Swaminathan |
Publisher | : |
Total Pages | : 630 |
Release | : 1991 |
Genre | : Technology & Engineering |
ISBN | : |
Discusses materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. Coverage includes state-of-the-art materials growth and characterization; and physics and chemistry of point defects and dislocations, defects and device reliability.