Microstructural Characterization Of Movpe Grown Aluminum Nitride Thin Films On Silicon 111 Substrates
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Nanoscale Microstructural Characterization of Aluminum and Copper Bilayer Thin Films Deposited on Silicon Substrate Using Magnetron Sputtering Technique
Author | : Zulhelmi Alif Abdul Halim |
Publisher | : |
Total Pages | : 161 |
Release | : 2014 |
Genre | : Thin films |
ISBN | : |
Aluminum Nitride Thin Films for MEMS Resonators
Author | : Vanni Lughi |
Publisher | : |
Total Pages | : 530 |
Release | : 2006 |
Genre | : |
ISBN | : 9780542681318 |
High quality aluminum nitride films, meeting all the requirements for the fabrication of the resonators, were deposited at low temperature (
Aluminum Nitride Thin Films - Deposition for Fabrication, Characterization and Fabrication of Surface Acoustic Wave Devices
Author | : Charlee Fansler |
Publisher | : |
Total Pages | : 124 |
Release | : 2008 |
Genre | : Technology & Engineering |
ISBN | : 9783836469722 |
Aluminum Nitride (AlN) thin films can be used for many device applications; for example, Surface Acoustic Wave (SAW) devices, microelectromechanical systems (MEMS) applications, and packaging applications. In this work, AlN is the critical layer in the fabrication process. One challenge is reliable deposition over wafer size substrates. The method of interest for deposition is pulsed DC sputtering. The (002) plane is the desired plane for its piezoelectric properties. The surface roughness of the deposited AlN is low and adheres well to the substrate. An AlN layer was deposited on a UNCD/Si substrate. Al was deposited on the AlN layer to form the IDTs (interdigital transducers) for SAW devices. SAW devices were fabricated on quartz - ST substrate. To verify the SAW devices work, they were tested using a network analyzer. This book discusses these results and parameters for AlN film deposition, film properties and implications for devices. This book would be beneficial for professionals, scientists, engineers, and graduate students in science and engineering working in the areas of wide bandgap semi-conductors, nitrides and piezoelectric materials and various acoustic wave devices.
Comprehensive Semiconductor Science and Technology
Author | : |
Publisher | : Newnes |
Total Pages | : 3572 |
Release | : 2011-01-28 |
Genre | : Science |
ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Microstructural Characterization of Post Ion-implanted Cubic Boron Nitride Thin Films by Transmission Electron Microscopy
Author | : Sandhya Gunasekara |
Publisher | : |
Total Pages | : 196 |
Release | : 1998 |
Genre | : Boron nitride |
ISBN | : |
Characterization of the Growth of Aluminum Nitride and Gallium Nitride Thin Films on Hydrogen Etched And/or Cleaned 6H-SiC(0001) Surfaces
Author | : Jeffrey David Hartman |
Publisher | : |
Total Pages | : 219 |
Release | : 2000 |
Genre | : |
ISBN | : |
Keywords: 6H-SiC, Hydrogen etching, Aluminum nitride, Gallium nitride, Photo-electron emission microscopy, Chemical vapor deposition, Molecular beam epitaxy.