Measurement And Modeling Of Transient Effects In Partially Depleted Soi Mosfets
Download Measurement And Modeling Of Transient Effects In Partially Depleted Soi Mosfets full books in PDF, epub, and Kindle. Read online free Measurement And Modeling Of Transient Effects In Partially Depleted Soi Mosfets ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Maryline Bawedin |
Publisher | : Presses univ. de Louvain |
Total Pages | : 176 |
Release | : 2007 |
Genre | : Science |
ISBN | : 9782874630880 |
Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.
Author | : James B. Kuo |
Publisher | : John Wiley & Sons |
Total Pages | : 424 |
Release | : 2004-04-05 |
Genre | : Technology & Engineering |
ISBN | : 0471464171 |
A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.
Author | : Anantha Chandrakasan |
Publisher | : John Wiley & Sons |
Total Pages | : 656 |
Release | : 1998-02-11 |
Genre | : Technology & Engineering |
ISBN | : 0780334299 |
This collection of important papers provides a comprehensive overview of low-power system design, from component technologies and circuits to architecture, system design, and CAD techniques. LOW POWER CMOS DESIGN summarizes the key low-power contributions through papers written by experts in this evolving field.
Author | : Dimitris Tsoukalas |
Publisher | : Springer Science & Business Media |
Total Pages | : 463 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709162440 |
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author | : James B. Kuo |
Publisher | : Springer Science & Business Media |
Total Pages | : 455 |
Release | : 2013-04-17 |
Genre | : Technology & Engineering |
ISBN | : 1475728239 |
Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.
Author | : Peter L. F. Hemment |
Publisher | : The Electrochemical Society |
Total Pages | : 458 |
Release | : 1996 |
Genre | : Science |
ISBN | : 9781566771535 |
Author | : |
Publisher | : |
Total Pages | : 442 |
Release | : 1996 |
Genre | : Chemistry |
ISBN | : |
Author | : |
Publisher | : Atlantica Séguier Frontières |
Total Pages | : 680 |
Release | : 1998 |
Genre | : Semiconductors |
ISBN | : 9782863322345 |
Author | : Patrick Roblin |
Publisher | : Cambridge University Press |
Total Pages | : 726 |
Release | : 2002-03-07 |
Genre | : Technology & Engineering |
ISBN | : 1139437461 |
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Author | : John D. Cressler |
Publisher | : CRC Press |
Total Pages | : 1041 |
Release | : 2017-12-19 |
Genre | : Technology & Engineering |
ISBN | : 143987431X |
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.