Mathematical Modelling And Simulation Of Electrical Circuits And Semiconductor Devices
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Author | : Randolph Bank |
Publisher | : Birkhäuser |
Total Pages | : 314 |
Release | : 2012-12-06 |
Genre | : Mathematics |
ISBN | : 3034885288 |
Progress in today's high-technology industries is strongly associated with the development of new mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. At the second Oberwolfach conference devoted to this important and timely field, scientists from around the world, mainly applied mathematicians and electrical engineers from industry and universities, presented their new results. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation. Discussions on experiences with standard software packages and improvements of such packages are included. In the semiconductor area special lectures were given on new modelling approaches, numerical techniques and existence and uniqueness results. In this connection, mention is made, for example, of mixed finite element methods, an extension of the Baliga-Patankar technique for a three dimensional simulation, and the connection between semiconductor equations and the Boltzmann equations.
Author | : R. Bank |
Publisher | : Birkhäuser |
Total Pages | : 297 |
Release | : 2014-10-05 |
Genre | : Science |
ISBN | : 9783034856997 |
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Author | : R. Bank |
Publisher | : Birkhäuser |
Total Pages | : 0 |
Release | : 1990-02-01 |
Genre | : Science |
ISBN | : 9783764324391 |
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Author | : Randolph E. Bank |
Publisher | : |
Total Pages | : 324 |
Release | : 1990 |
Genre | : Computer simulation |
ISBN | : |
Author | : R. Bank |
Publisher | : Birkhäuser |
Total Pages | : 298 |
Release | : 2013-11-22 |
Genre | : Science |
ISBN | : 3034856989 |
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Author | : Narain D. Arora |
Publisher | : Springer Science & Business Media |
Total Pages | : 628 |
Release | : 2012-12-06 |
Genre | : Computers |
ISBN | : 3709192471 |
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author | : K. Antreich |
Publisher | : Birkhäuser |
Total Pages | : 356 |
Release | : 2012-12-06 |
Genre | : Mathematics |
ISBN | : 3034880650 |
The third Conference on Mathematical Models and Numerical Simulation in Electronic Industry brought together researchers in mathematics, electrical engineering and scientists working in industry. The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.
Author | : Roy Leventhal |
Publisher | : Springer Science & Business Media |
Total Pages | : 769 |
Release | : 2007-01-10 |
Genre | : Technology & Engineering |
ISBN | : 0387241604 |
Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers
Author | : Tor A. Fjeldly |
Publisher | : Wiley-Interscience |
Total Pages | : 440 |
Release | : 1998 |
Genre | : Computers |
ISBN | : |
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Author | : S. Selberherr |
Publisher | : Springer Science & Business Media |
Total Pages | : 308 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709187524 |
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.