Materials in Extreme Environments: Volume 929

Materials in Extreme Environments: Volume 929
Author: Daryush Ila
Publisher:
Total Pages: 242
Release: 2006-09-15
Genre: Science
ISBN:

This book investigates the fundamental properties and response of materials in extreme environments such as static and dynamic high pressure, high strain and high strain-rates, high radiation and electromagnetic fields, high and low temperatures, corrosive conditions, environments causing embrittlement, and environments containing atomic oxygen. This is an extremely active and vibrant field of research, in particular because it is now possible to create laboratory conditions similar in pressure, temperature and radiation to those found in planetary interiors and in space. In addition, advanced simulation methods, coupled with high-performance computing platforms, now afford predictions - on a first-principles basis - of the properties of materials in extreme environments. Scientists from a broad spectrum of fields are represented, including space science, planetary science, high-pressure research, shock physics, ultrafast science, and energetic materials research.

Doping Engineering for Device Fabrication: Volume 912

Doping Engineering for Device Fabrication: Volume 912
Author: B. J. Pawlak
Publisher:
Total Pages: 240
Release: 2006-10-11
Genre: Science
ISBN:

This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.

Transistor Scaling: Volume 913

Transistor Scaling: Volume 913
Author: Scott Thompson
Publisher:
Total Pages: 234
Release: 2006-11-07
Genre: Technology & Engineering
ISBN:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured