Materials And Process Characterization Of Ion Implantation
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| Author | : Bernd Schmidt |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 425 |
| Release | : 2012-12-13 |
| Genre | : Technology & Engineering |
| ISBN | : 3211993568 |
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
| Author | : Norman G. Einspruch |
| Publisher | : Academic Press |
| Total Pages | : 614 |
| Release | : 2014-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1483217736 |
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
| Author | : Michael Nastasi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 271 |
| Release | : 2007-05-16 |
| Genre | : Science |
| ISBN | : 3540452982 |
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
| Author | : A. Borghesi |
| Publisher | : North Holland |
| Total Pages | : 624 |
| Release | : 1996 |
| Genre | : Science |
| ISBN | : |
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
| Author | : Bernd O. Kolbesen |
| Publisher | : The Electrochemical Society |
| Total Pages | : 479 |
| Release | : 2009-09 |
| Genre | : Semiconductors |
| ISBN | : 1566777402 |
The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.
| Author | : Xiangfu Zong |
| Publisher | : World Scientific Publishing Company |
| Total Pages | : 594 |
| Release | : 1988 |
| Genre | : Science |
| ISBN | : |
| Author | : Michael Nastasi |
| Publisher | : Cambridge University Press |
| Total Pages | : 572 |
| Release | : 1996-03-29 |
| Genre | : Science |
| ISBN | : 052137376X |
Comprehensive guide to an important materials science technique for students and researchers.
| Author | : United States. Bureau of Mines |
| Publisher | : |
| Total Pages | : 40 |
| Release | : 1980 |
| Genre | : Alloys |
| ISBN | : |
| Author | : Bernd O. Kolbesen (Chemiker.) |
| Publisher | : The Electrochemical Society |
| Total Pages | : 568 |
| Release | : 1999 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566772396 |
| Author | : P. D. Townsend |
| Publisher | : Cambridge University Press |
| Total Pages | : 296 |
| Release | : 1994-06-23 |
| Genre | : Science |
| ISBN | : 9780521394307 |
This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. The book concludes with a survey of the exciting range of potential applications.
