Low Power Embedded Memory Circuits In Nano Scale Cmos Technologies
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| Author | : Kevin Zhang |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 390 |
| Release | : 2009-04-21 |
| Genre | : Technology & Engineering |
| ISBN | : 0387884971 |
Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.
| Author | : Kiyoo Itoh |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 351 |
| Release | : 2007-09-04 |
| Genre | : Technology & Engineering |
| ISBN | : 0387688536 |
Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.
| Author | : Saraju P. Mohanty |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 325 |
| Release | : 2008-05-31 |
| Genre | : Technology & Engineering |
| ISBN | : 0387764747 |
This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.
| Author | : Krzysztof Iniewski |
| Publisher | : CRC Press |
| Total Pages | : 602 |
| Release | : 2018-10-08 |
| Genre | : Technology & Engineering |
| ISBN | : 1420070630 |
Circuits for Emerging Technologies Beyond CMOS New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems. A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.
| Author | : Masashi Horiguchi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 221 |
| Release | : 2011-01-11 |
| Genre | : Technology & Engineering |
| ISBN | : 1441979581 |
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
| Author | : Saraju P. Mohanty |
| Publisher | : IET |
| Total Pages | : 439 |
| Release | : 2016-04-28 |
| Genre | : Technology & Engineering |
| ISBN | : 184919999X |
Continuing from volume 1, this volume outlines circuit- and system-level design approaches and issues for these devices. Topics covered include self-healing analog/RF circuits; on-chip gate delay variability measurement in scaled technology; FinFET SRAM circuits; nanoscale FinFET devices for PVT aware SRAM; low leakage variability aware CMOS logic circuits; thermal effects in MWCNT VLSI interconnects; an accurate PVT-aware statistical logic library for nano-CMOS integrated circuits; SPICEless RTL design optimization of nano-electronic digital integrated circuits; power-delay trade-off driven optimal scheduling of CDFGs during high level synthesis; green on-chip inductors for three-dimensional integrated circuits; 3D NoC -- a promising alternative for tomorrow's nano-system design; and DNA computing.
| Author | : Jan Rabaey |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 371 |
| Release | : 2009-04-21 |
| Genre | : Technology & Engineering |
| ISBN | : 0387717137 |
This book contains all the topics of importance to the low power designer. It first lays the foundation and then goes on to detail the design process. The book also discusses such special topics as power management and modal design, ultra low power, and low power design methodology and flows. In addition, coverage includes projections of the future and case studies.
| Author | : Bhupendra Singh Reniwal |
| Publisher | : CRC Press |
| Total Pages | : 213 |
| Release | : 2023-11-30 |
| Genre | : Technology & Engineering |
| ISBN | : 1000985156 |
This reference text covers a wide spectrum for designing robust embedded memory and peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate students and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discusses low-power design methodologies for static random-access memory (SRAM) Covers radiation-hardened SRAM design for aerospace applications Focuses on various reliability issues that are faced by submicron technologies Exhibits more stable memory topologies Nanoscale technologies unveiled significant challenges to the design of energy- efficient and reliable SRAMs. This reference text investigates the impact of process variation, leakage, aging, soft errors and related reliability issues in embedded memory and periphery circuitry. The text adopts a unique way to explain the SRAM bitcell, array design, and analysis of its design parameters to meet the sub-nano-regime challenges for complementary metal-oxide semiconductor devices. It comprehensively covers low- power-design methodologies for SRAM, exhibits more stable memory topologies, and radiation-hardened SRAM design for aerospace applications. Every chapter includes a glossary, highlights, a question bank, and problems. The text will serve as a useful text for senior undergraduate students, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discussing comprehensive studies of variability-induced failure mechanism in sense amplifiers and power, delay, and read yield trade-offs, this reference text will serve as a useful text for senior undergraduate, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. It covers the development of robust SRAMs, well suited for low-power multi-core processors for wireless sensors node, battery-operated portable devices, personal health care assistants, and smart Internet of Things applications.
| Author | : Soumya Pandit |
| Publisher | : CRC Press |
| Total Pages | : 397 |
| Release | : 2018-09-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1466564288 |
Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.
| Author | : Amara Amara |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 215 |
| Release | : 2009-01-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1402093411 |
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
