Low Power And Reliable Sram Memory Cell And Array Design
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| Author | : Koichiro Ishibashi |
| Publisher | : Springer |
| Total Pages | : 144 |
| Release | : 2013-11-27 |
| Genre | : Technology & Engineering |
| ISBN | : 9783642270185 |
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
| Author | : Koichiro Ishibashi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 154 |
| Release | : 2011-08-18 |
| Genre | : Technology & Engineering |
| ISBN | : 3642195687 |
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
| Author | : Jawar Singh |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 176 |
| Release | : 2012-08-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1461408180 |
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
| Author | : Eishi H. Ibe |
| Publisher | : John Wiley & Sons |
| Total Pages | : 292 |
| Release | : 2015-03-02 |
| Genre | : Technology & Engineering |
| ISBN | : 1118479297 |
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.
| Author | : Bhupendra Singh Reniwal |
| Publisher | : CRC Press |
| Total Pages | : 221 |
| Release | : 2023-11-29 |
| Genre | : Technology & Engineering |
| ISBN | : 100098513X |
This reference text covers a wide spectrum for designing robust embedded memory and peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate students and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discusses low-power design methodologies for static random-access memory (SRAM) Covers radiation-hardened SRAM design for aerospace applications Focuses on various reliability issues that are faced by submicron technologies Exhibits more stable memory topologies Nanoscale technologies unveiled significant challenges to the design of energy- efficient and reliable SRAMs. This reference text investigates the impact of process variation, leakage, aging, soft errors and related reliability issues in embedded memory and periphery circuitry. The text adopts a unique way to explain the SRAM bitcell, array design, and analysis of its design parameters to meet the sub-nano-regime challenges for complementary metal-oxide semiconductor devices. It comprehensively covers low- power-design methodologies for SRAM, exhibits more stable memory topologies, and radiation-hardened SRAM design for aerospace applications. Every chapter includes a glossary, highlights, a question bank, and problems. The text will serve as a useful text for senior undergraduate students, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discussing comprehensive studies of variability-induced failure mechanism in sense amplifiers and power, delay, and read yield trade-offs, this reference text will serve as a useful text for senior undergraduate, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. It covers the development of robust SRAMs, well suited for low-power multi-core processors for wireless sensors node, battery-operated portable devices, personal health care assistants, and smart Internet of Things applications.
| Author | : Baker Mohammad |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 104 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1461488818 |
This book describes the various tradeoffs systems designers face when designing embedded memory. Readers designing multi-core systems and systems on chip will benefit from the discussion of different topics from memory architecture, array organization, circuit design techniques and design for test. The presentation enables a multi-disciplinary approach to chip design, which bridges the gap between the architecture level and circuit level, in order to address yield, reliability and power-related issues for embedded memory.
| Author | : Shojiro Asai |
| Publisher | : Springer |
| Total Pages | : 792 |
| Release | : 2018-07-20 |
| Genre | : Technology & Engineering |
| ISBN | : 4431565949 |
This book discusses the new roles that the VLSI (very-large-scale integration of semiconductor circuits) is taking for the safe, secure, and dependable design and operation of electronic systems. The book consists of three parts. Part I, as a general introduction to this vital topic, describes how electronic systems are designed and tested with particular emphasis on dependability engineering, where the simultaneous assessment of the detrimental outcome of failures and cost of their containment is made. This section also describes the related research project “Dependable VLSI Systems,” in which the editor and authors of the book were involved for 8 years. Part II addresses various threats to the dependability of VLSIs as key systems components, including time-dependent degradations, variations in device characteristics, ionizing radiation, electromagnetic interference, design errors, and tampering, with discussion of technologies to counter those threats. Part III elaborates on the design and test technologies for dependability in such applications as control of robots and vehicles, data processing, and storage in a cloud environment and heterogeneous wireless telecommunications. This book is intended to be used as a reference for engineers who work on the design and testing of VLSI systems with particular attention to dependability. It can be used as a textbook in graduate courses as well. Readers interested in dependable systems from social and industrial–economic perspectives will also benefit from the discussions in this book.
| Author | : Michael Hübner |
| Publisher | : Springer |
| Total Pages | : 105 |
| Release | : 2015-11-14 |
| Genre | : Technology & Engineering |
| ISBN | : 3319233890 |
This book explores near-threshold computing (NTC), a design-space using techniques to run digital chips (processors) near the lowest possible voltage. Readers will be enabled with specific techniques to design chips that are extremely robust; tolerating variability and resilient against errors. Variability-aware voltage and frequency allocation schemes will be presented that will provide performance guarantees, when moving toward near-threshold manycore chips. · Provides an introduction to near-threshold computing, enabling reader with a variety of tools to face the challenges of the power/utilization wall; · Demonstrates how to design efficient voltage regulation, so that each region of the chip can operate at the most efficient voltage and frequency point; · Investigates how performance guarantees can be ensured when moving towards NTC manycores through variability-aware voltage and frequency allocation schemes.
| Author | : Azam Seyedi |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 86 |
| Release | : 2024-01-10 |
| Genre | : Computers |
| ISBN | : 1803555882 |
Computer Memory and Data Storage presents a comprehensive exploration of the intricacies of memory design, delving into the challenges and advanced techniques involved in optimizing power consumption, performance, reliability, and data integrity. The chapters provide a complete understanding of modern memory technologies, ranging from radiation-hardened memory for space applications to diverse memory designs and their trade-offs.
| Author | : Ian Kuon |
| Publisher | : Now Publishers Inc |
| Total Pages | : 134 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 1601981260 |
Reviews the historical development of programmable logic devices, the fundamental programming technologies that the programmability is built on, and then describes the basic understandings gleaned from research on architectures. It is an invaluable reference for engineers and computer scientists.
