Ion Implantation 1988
Author | : Fred H. Wohlbier |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 472 |
Release | : 1988-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035702942 |
The volume presents 24 invited contributions.
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Author | : Fred H. Wohlbier |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 472 |
Release | : 1988-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035702942 |
The volume presents 24 invited contributions.
Author | : J.F. Ziegler |
Publisher | : Elsevier |
Total Pages | : 649 |
Release | : 2012-12-02 |
Genre | : Science |
ISBN | : 0323144012 |
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author | : Uniwersytet Marii Curie-Skłodowskiej (Lublin). Instytut Fizyki |
Publisher | : |
Total Pages | : 180 |
Release | : 1988 |
Genre | : |
ISBN | : |
Author | : Emanuele Rimini |
Publisher | : Springer Science & Business Media |
Total Pages | : 400 |
Release | : 2013-11-27 |
Genre | : Technology & Engineering |
ISBN | : 1461522595 |
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author | : Robert Francis Hochman |
Publisher | : |
Total Pages | : 252 |
Release | : 1988 |
Genre | : Science |
ISBN | : |
Author | : D.F. Downey |
Publisher | : Elsevier |
Total Pages | : 716 |
Release | : 2012-12-02 |
Genre | : Technology & Engineering |
ISBN | : 0444599800 |
Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Author | : Geoffrey Dearnaley |
Publisher | : North-Holland |
Total Pages | : 826 |
Release | : 1973 |
Genre | : Science |
ISBN | : |