Investigation Of Iii V High Electron Mobility Transistors And The Approaches Of The Threshold Voltage Modulation
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Author | : D. Nirmal |
Publisher | : CRC Press |
Total Pages | : 430 |
Release | : 2019-05-14 |
Genre | : Science |
ISBN | : 0429862539 |
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author | : |
Publisher | : Newnes |
Total Pages | : 3572 |
Release | : 2011-01-28 |
Genre | : Science |
ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author | : |
Publisher | : |
Total Pages | : 1074 |
Release | : 1993 |
Genre | : Physics |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 854 |
Release | : 2007 |
Genre | : Dissertations, Academic |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1360 |
Release | : 1995 |
Genre | : Electrical engineering |
ISBN | : |
Author | : D. Nirmal |
Publisher | : CRC Press |
Total Pages | : 434 |
Release | : 2019-05-14 |
Genre | : Science |
ISBN | : 0429862520 |
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author | : Heinrich Daembkes |
Publisher | : Institute of Electrical & Electronics Engineers(IEEE) |
Total Pages | : 484 |
Release | : 1991 |
Genre | : Technology & Engineering |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1904 |
Release | : 1997 |
Genre | : Electrical engineering |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1108 |
Release | : 2000 |
Genre | : Engineering |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1058 |
Release | : 2007 |
Genre | : Physics |
ISBN | : |