MAM '97, Abstracts Booklet

MAM '97, Abstracts Booklet
Author:
Publisher: Societe Francaise Du Vide
Total Pages: 232
Release: 1997
Genre: Computers
ISBN:

This text covers the 1997 European workshop on materials for advanced metalization. It should be useful to researchers, universities and packaging engineers.

Handbook of Thin Film Deposition

Handbook of Thin Film Deposition
Author: Krishna Seshan
Publisher: William Andrew
Total Pages: 411
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1437778747

The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry

BiCMOS Technology and Applications

BiCMOS Technology and Applications
Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
Total Pages: 412
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461532183

BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

Nano-CMOS Circuit and Physical Design

Nano-CMOS Circuit and Physical Design
Author: Ban Wong
Publisher: John Wiley & Sons
Total Pages: 413
Release: 2005-04-08
Genre: Technology & Engineering
ISBN: 0471678864

Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Low-Power Digital VLSI Design

Low-Power Digital VLSI Design
Author: Abdellatif Bellaouar
Publisher: Springer Science & Business Media
Total Pages: 539
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461523559

Low-Power Digital VLSI Design: Circuits and Systems addresses both process technologies and device modeling. Power dissipation in CMOS circuits, several practical circuit examples, and low-power techniques are discussed. Low-voltage issues for digital CMOS and BiCMOS circuits are emphasized. The book also provides an extensive study of advanced CMOS subsystem design. A low-power design methodology is presented with various power minimization techniques at the circuit, logic, architecture and algorithm levels. Features: Low-voltage CMOS device modeling, technology files, design rules Switching activity concept, low-power guidelines to engineering practice Pass-transistor logic families Power dissipation of I/O circuits Multi- and low-VT CMOS logic, static power reduction circuit techniques State of the art design of low-voltage BiCMOS and CMOS circuits Low-power techniques in CMOS SRAMS and DRAMS Low-power on-chip voltage down converter design Numerous advanced CMOS subsystems (e.g. adders, multipliers, data path, memories, regular structures, phase-locked loops) with several design options trading power, delay and area Low-power design methodology, power estimation techniques Power reduction techniques at the logic, architecture and algorithm levels More than 190 circuits explained at the transistor level.

Manufacturing Techniques for Microfabrication and Nanotechnology

Manufacturing Techniques for Microfabrication and Nanotechnology
Author: Marc J. Madou
Publisher: CRC Press
Total Pages: 672
Release: 2011-06-13
Genre: Technology & Engineering
ISBN: 1420055194

Designed for science and engineering students, this text focuses on emerging trends in processes for fabricating MEMS and NEMS devices. The book reviews different forms of lithography, subtractive material removal processes, and additive technologies. Both top-down and bottom-up fabrication processes are exhaustively covered and the merits of the different approaches are compared. Students can use this color volume as a guide to help establish the appropriate fabrication technique for any type of micro- or nano-machine.

Floating Body Cell

Floating Body Cell
Author: Takashi Ohsawa
Publisher: CRC Press
Total Pages: 266
Release: 2011-10-14
Genre: Technology & Engineering
ISBN: 9814303070

This book focuses on the technologies of the floating body cell (FBC), which is regarded as the most probable candidate to replace the conventional 1T-1C DRAM. It covers basic principles, procedures for device structure optimization, operational methods, relations between different applications, and their suitable technology options. One of the authors (Dr. Takashi Ohsawa) is known as the inventor of FBC and presented the award-winning paper at the IEEE International Solid-State Circuits Conference (ISSCC) in 2002 for the cell concept and a memory design using the cell.

Mosfet Modeling For Vlsi Simulation: Theory And Practice

Mosfet Modeling For Vlsi Simulation: Theory And Practice
Author: Narain Arora
Publisher: World Scientific
Total Pages: 633
Release: 2007-02-14
Genre: Technology & Engineering
ISBN: 9814365491

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.