Integration of III-V materials with Si substrates has been studied extensively in recent years since it has a wide range of applications on optoelectronic integrated circuits (OEIC). It enables the combinations of III-V based optoelectronic devices with Si-based microelectronic devices and circuits. The conventional approach for III-V integration with Si is based on wafer bonding and etch-back. Although it provides III-V materials transferred on Si with relatively high crystalline quality, the etch-back process in this approach etches off the initial III-V growth substrate thus it gives low yield and increases the cost. Recently, another III-V layer transfer approach using the ion-cut (smart-cut®) process has been demonstrated, based on hydrogen ion implantation and wafer bonding. This approach has the advantage of saving the initial III-V substrate for reuse, but the transferred structure usually suffers from the hydrogen implantation induced damage. This dissertation demonstrates a new approach that combines ion-cut and selective chemical etch for InP-based III-V layer transfer. This layer transfer scheme takes advantage of conventional ion-cutting process by conserving III-V substrates for reuse, and simultaneously improving the transferred layer quality and surface condition without using chemical and mechanical polishing. The effects of hydrogen ion implantation conditions (temperature, dose rate, and energy) on III-V ion-cut process have been investigated and the physical mechanism behind these effects was examined. Based on these findings, the hydrogen implantation conditions were optimized in our study that led to successful III-V layer transfers. Based on our layer transfer scheme, two approaches have been explored for integrating an III-V based device on Si. One way is to transfer an InP layer onto Si and use this transferred structure as a growth template. Instead of growing complicated III-V device structures which are out of the growth capacity in our laboratory, we focused on the fundamental issues with the transferred structure that must be solved for the growth template purpose. Particularly there is a bubble issue that always shows up when the transferred structures are heated up in the growth chamber. We studied the origin of these bubbles and implemented a simple and effective approach that can constantly solve the bubble problem. Another way is to grow an III-V device on III-V substrate and transfer the whole device structure onto Si. InP/InGaAs/InP p-i-n photodiodes were transferred onto Si substrate and the effects of the hydrogen implantation on the device performance have been discussed.