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| Author | : Vinod Kumar Khanna |
| Publisher | : John Wiley & Sons |
| Total Pages | : 648 |
| Release | : 2004-04-05 |
| Genre | : Technology & Engineering |
| ISBN | : 047166099X |
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
| Author | : B. Jayant Baliga |
| Publisher | : William Andrew |
| Total Pages | : 733 |
| Release | : 2015-03-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1455731536 |
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
| Author | : Joseph A. Yedinak |
| Publisher | : |
| Total Pages | : 296 |
| Release | : 1997 |
| Genre | : Bipolar transistors |
| ISBN | : |
| Author | : James Fiore |
| Publisher | : |
| Total Pages | : 407 |
| Release | : 2017-05-11 |
| Genre | : |
| ISBN | : 9781796543537 |
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
| Author | : Jos Arrillaga |
| Publisher | : John Wiley & Sons |
| Total Pages | : 324 |
| Release | : 2010-01-12 |
| Genre | : Technology & Engineering |
| ISBN | : 0470682124 |
For very high voltage or very high current applications, the power industry still relies on thyristor-based Line Commutated Conversion (LCC), which limits the power controllability to two quadrant operation. However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications. This unique book reviews the present state and future prospects of self-commutating static power converters for applications requiring either ultra high voltages (over 600 kV) or ultra high currents (in hundreds of kA). It is an important reference for electrical engineers working in the areas of power generation, transmission and distribution, utilities, manufacturing and consulting organizations. All topics in this area are held in this one complete volume. Within these pages, expect to find thorough coverage on: modelling and control of converter dynamics; multi-level Voltage Source Conversion (VSC) and Current Source Conversion (CSC); ultra high-voltage VSC and CSC DC transmission; low voltage high DC current AC-DC conversion; industrial high current applications; power conversion for high energy storage. This text has a host of helpful material that also makes it a useful source of knowledge for final year engineering students specializing in power engineering, and those involved in postgraduate research.
| Author | : Kaustubh Gupta |
| Publisher | : |
| Total Pages | : |
| Release | : 2013 |
| Genre | : |
| ISBN | : |
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277
| Author | : S W Amos |
| Publisher | : Elsevier |
| Total Pages | : 401 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1483293904 |
For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand and as practical solutions to design problems, especially where appreciable power output or high voltage is required. New circuit techniques covered for the first time in this edition include current-dumping amplifiers, bridge output stages, dielectric resonator oscillators, crowbar protection circuits, thyristor field timebases, low-noise blocks and SHF amplifiers in satellite receivers, video clamps, picture enhancement circuits, motor drive circuits in video recorders and camcorders, and UHF modulators. The plan of the book remains the same: semiconductor physics is introduced, followed by details of the design of transistors, amplifiers, receivers, oscillators and generators. Appendices provide information on transistor manufacture and parameters, and a new appendix on transistor letter symbols has been included.
