Indium Phosphide Based Strained Multiple Quantum Well Lasers
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Passive Micro-Optical Alignment Methods
| Author | : Robert A. Boudreau |
| Publisher | : CRC Press |
| Total Pages | : 417 |
| Release | : 2018-10-03 |
| Genre | : Science |
| ISBN | : 1420027727 |
The most expensive phase in the manufacture of micro-optical components and fiber optics is also one of the most performance-critical: optical alignment of the components. The increasing degree of miniaturization makes this an especially challenging task. Active alignment methods result in higher costs and awkward processes, and for some applications, they simply are not possible. Passive Micro-Optical Alignment Methods introduces the passive alignment methods that are currently available and illustrates them with many examples, references, and critiques. The first book dedicated to passive alignment, it begins with an overview of the current activities, requirements, and general results of passive optical alignments, followed by three sections of in-depth analysis. The first of these discusses mechanical passive alignment, highlighting silicon waferboard, solder, and "Jitney" technologies as well as application of mechanical alignment to 3D free-space interconnects. The next section describes the various visual alignment techniques applied to Planar Lightwave Circuits (PLCs) and low-cost plastic and surface mount packaging. The final section details various utilities that aid passive alignment and their resulting tradeoffs and demonstrates Monte Carlo analysis to evaluate the potential of a given method. Passive Micro-Optical Alignment Methods provides the tools necessary to meet the challenge of precision and low-cost alignment for applications that require micron or sub-micron tolerance.
Materials for Optoelectronic Devices, OEICs and Photonics
| Author | : H. Schlötterer |
| Publisher | : Elsevier |
| Total Pages | : 542 |
| Release | : 1991-10-08 |
| Genre | : Science |
| ISBN | : 0444596755 |
The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Semiconductor Materials for Optoelectronics and LTMBE Materials
| Author | : J.P. Hirtz |
| Publisher | : Elsevier |
| Total Pages | : 365 |
| Release | : 2016-07-29 |
| Genre | : Science |
| ISBN | : 1483290425 |
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Comprehensive Semiconductor Science and Technology
| Author | : |
| Publisher | : Newnes |
| Total Pages | : 3572 |
| Release | : 2011-01-28 |
| Genre | : Science |
| ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Molecular Beam Epitaxy
| Author | : Mohamed Henini |
| Publisher | : Elsevier |
| Total Pages | : 790 |
| Release | : 2018-06-27 |
| Genre | : Science |
| ISBN | : 0128121378 |
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
InP-Based Materials and Devices
| Author | : Osamu Wada |
| Publisher | : Wiley-Interscience |
| Total Pages | : 616 |
| Release | : 1999-04-13 |
| Genre | : Science |
| ISBN | : |
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
