Indium Nitride and Related Alloys

Indium Nitride and Related Alloys
Author: Timothy David Veal
Publisher: CRC Press
Total Pages: 707
Release: 2011-06-03
Genre: Technology & Engineering
ISBN: 1439859612

Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

III-nitride Devices and Nanoengineering

III-nitride Devices and Nanoengineering
Author: Zhe Chuan Feng
Publisher: World Scientific
Total Pages: 477
Release: 2008
Genre: Technology & Engineering
ISBN: 1848162235

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Phase Diagrams of Indium Alloys and Their Engineering Applications

Phase Diagrams of Indium Alloys and Their Engineering Applications
Author: Charles E. T. White
Publisher: ASM International(OH)
Total Pages: 360
Release: 1992
Genre: Science
ISBN:

Evaluations of pure indium plus 79 binary indium alloys and 24 higher-order systems containing indium. In addition, a special section is on solders and other significant applications of indium are included.

Indium Nitride

Indium Nitride
Author:
Publisher:
Total Pages: 5
Release: 2002
Genre:
ISBN:

The optical properties of wurtzite InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. All these three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free electron concentration of the sample. The peak energy exhibits a very weak hydrostatic pressure dependence and a small, anomalous blueshift with increasing temperature. The bandgap energies of In-rich InGaN alloys were found to be consistent with the narrow gap of InN. The bandgap bowing parameter was determined to be 1.43 eV in InGaN.

The Group 13 Metals Aluminium, Gallium, Indium and Thallium

The Group 13 Metals Aluminium, Gallium, Indium and Thallium
Author: Simon Aldridge
Publisher: John Wiley & Sons
Total Pages: 763
Release: 2011-04-11
Genre: Science
ISBN: 0470681918

The last two decades have seen a renaissance in interest in the chemistry of the main group elements. In particular research on the metals of group 13 (aluminium, gallium, indium and thallium) has led to the synthesis and isolation of some very novel and unusual molecules, with implications for organometallic synthesis, new materials development, and with biological, medical and, environmental relevance. The Group 13 Metals Aluminium, Gallium, Indium and Thallium aims to cover new facts, developments and applications in the context of more general patterns of physical and chemical behaviour. Particular attention is paid to the main growth areas, including the chemistry of lower formal oxidation states, cluster chemistry, the investigation of solid oxides and hydroxides, advances in the formation of III-V and related compounds, the biological significance of Group 13 metal complexes, and the growing importance of the metals and their compounds in the mediation of organic reactions. Chapters cover: general features of the group 13 elements group 13 metals in the +3 oxidation state: simple inorganic compounds formal oxidation state +3: organometallic chemistry formal oxidation state +2: metal-metal bonded vs. mononuclear derivatives group 13 metals in the +1 oxidation state mixed or intermediate valence group 13 metal compounds aluminium and gallium clusters: metalloid clusters and their relation to the bulk phases, to naked clusters, and to nanoscaled materials simple and mixed metal oxides and hydroxides: solids with extended structures of different dimensionalities and porosities coordination and solution chemistry of the metals: biological, medical and, environmental relevance III-V and related semiconductor materials group 13 metal-mediated organic reactions The Group 13 Metals Aluminium, Gallium, Indium and Thallium provides a detailed, wide-ranging, and up-to-date review of the chemistry of this important group of metals. It will find a place on the bookshelves of practitioners, researchers and students working in inorganic, organometallic, and materials chemistry.

Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy

Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy
Author: Steven Paul Minor
Publisher:
Total Pages: 222
Release: 2019
Genre: Molecular beam epitaxy
ISBN:

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near infrared. This study investigates the processes by which InN quantum dots (QDs) form through molecular beam epitaxy (MBE) growth in Nitrogen-Rich and Metal-Rich growth environments. Structural characterization was performed using Atomic Force Microscopy. Statistical analysis was performed on both growth environments, Metal-Rich and Nitrogen-Rich, to observe changes in nucleation density, QD height and diameter, volume of InN, and the contact angle between the QDs and the growth surface. To further understand the growth environments, the system was analyzed as functions of growth temperature, deposition time, and deposition rate. Under Nitrogen-Rich growth environment, it was found that the growth of InN QDs follows typical Stranski-Krastinov (SK), heterogeneous nucleation theory. However, due to the existence of an excess indium adlayer, the Metal-Rich growth condition changes the development of the InN QDs. The results of this investigation are presented herein. A cursory investigation in the optical response of both growth environments was performed. The optical response was characterized through photoluminescence (PL) spectroscopy with a transition at 730 nm for Metal-Rich InN QDs using a two-step GaN capping procedure.

Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication

Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
Author: Steven P. Minor
Publisher:
Total Pages: 158
Release: 2012
Genre: Atomic force microscopy
ISBN: 9781267201140

The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough to characterize and use in devices. Much, however, is yet to be answered regarding the processes of crystal formation of InN. This study investigates the processes by which InN nanostructures form in MBE growth. A phase diagram depicting the various growth modes was created by varying the In/N flux ratio and growth temperature. A transition from a 2D to a 3D growth mode can be realized by lowering both the flux ratio (changing to an N rich growth) and the growth temperature. Structural characterization of MBE grown InN was performed using X-ray Diffraction and Atomic Force Microscopy. Changes in the surface morphology are discussed and shown to be affected most by the indium and nitrogen adatom diffusion length, mobility, and nucleation densities. Characterization of the optical response of InN films was performed using Fourier transform spectroscopy. Trends in the structural periodicity and optical response were found and are presented within.