In Situ Electron And Tunneling Microscopy Of Dynamic Processes Volume 404
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| Author | : Renu Sharma |
| Publisher | : |
| Total Pages | : 250 |
| Release | : 1996-08-26 |
| Genre | : Science |
| ISBN | : |
Electron microscopy techniques are among the most powerful methods for characterization of materials, with the ability to reveal both the atomic-scale structure and composition. This information may be used to elucidate macroscopic properties or to optimize materials synthesis and processing. Instrumentation and techniques for dynamic in situ experiments are undergoing rapid development and have recently been applied to a wide range of problems. This book focuses on time-resolved electron microscopy (including diffraction and spectroscopy), as well as novel instrumentation for temperature and pressure control. In addition to discussing the application of electron microscopy techniques to the in situ study of the kinetics, thermodynamics and mechanisms of reaction, the book also explores their utility as efficient methods of optimizing processing conditions. Imaging techniques featured include: scanning tunneling microscopy, high-resolution electron microscopy, dark field transmission and reflection electron microscopy, Lorentz microscopy, electron holography, scanning and low-energy electron microscopy and photoemission electron microscopy
| Author | : Pratibha L. Gai |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 345 |
| Release | : 2013-11-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1461562155 |
2. High Temperature UHV-STM System 264 3. Hydrogen Desorption Process on Si (111) Surface 264 4. (7x7) - (1 xl) Phase Transition on Si (111) Surface 271 Step Shifting under dc Electric Fields 275 5. 6. Conclusions 280 Acknowledgements and References 281 12. DYNAMIC OBSERVATION OF VORTICES IN SUPERCONDUCTORS USING ELECTRON WAVES 283 by Akira Tonomura 1. Introduction 283 2. Experimental Method 284 2. 1 Interference Microscopy 284 2. 2 Lorentz Microscopy 287 Observation of Superconducting Vortices 288 3. 3. 1 Superconducting Vortices Observed by Interference Microscopy 288 3. 1. 1 Profile Mode 288 3. 1. 2 Transmission Mode 291 3. 2 Superconducting Vortices Observed by Lorentz Microscopy 293 3. 3 Observation of Vortex Interaction with Pinning Centers 294 3. 3. 1 Surface Steps 295 3. 3. 2 Irradiated Point Defects 296 4. Conclusion 298 References 299 13. TEM STUDIES OF SOME STRUCTURALLY FLEXIBLE SOLIDS AND THEIR ASSOCIATED PHASE TRANSFORMATIONS 301 by Ray L. Withers and John G. Thompson 1. Introduction 301 2. Tetrahedrally Comer-Connected Framework Structures 302 3. Tetragonal a-PbO 311 4. Compositionally Flexible Anion-Deficient Fluorites and the "Defect Fluorite" to C-type Sesquioxide Transition 320 5. Summary and Conclusions 327 Acknowledgements and References 327 Author Index 331 Subject Index 333 List of Contributors A. ASEEV Institute of Semiconductor Physics, Russian Academy of Sciences Novosibirsk, 630090, pr. ac. , Lavrentjeva 13, RUSSIA E. BAUER Department of Physics and Astronomy, Arizona State University Tempe, AZ 85287-1504, U. S. A. G. H.
| Author | : C. Barry Carter |
| Publisher | : Springer |
| Total Pages | : 543 |
| Release | : 2016-08-24 |
| Genre | : Technology & Engineering |
| ISBN | : 3319266519 |
This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.
| Author | : J. C. Gelpey |
| Publisher | : |
| Total Pages | : 416 |
| Release | : 1996-10-14 |
| Genre | : Technology & Engineering |
| ISBN | : |
This book is the latest in a continuing series on rapid thermal processing and related topics. It embraces a diversity of research, development and manufacturing activities that require rapid thermal and integrated processing techniques which are recognized by their acronyms, such as rapid thermal annealing (RTA), rapid thermal processing (RTP), rapid thermal chemical vapor deposition (RTCVP), rapid thermal oxidation (RTO), and others. This fifth anniversary volume reports notable advances in the use of rapid thermal techniques in processing science and technology, and for process control in industrial fabrication facilities. It is organized around progress obtained through: evaluation methodology; equipment and process modelling; temperature control; defects and diffusion associated with annealing; metallizations such as silicidation; novel processing of sol-gel and magnetic films; dielectric growth and deposition; and silicon or silicon-germanium film deposition.
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 968 |
| Release | : 1996-04-03 |
| Genre | : Technology & Engineering |
| ISBN | : |
Safe and effective management of nuclear waste provides a broad range of challenges for materials science. Waste processing, waste form and engineered barrier properties, interactions between engineered and geological systems, radiation effects, chemistry and transport of waste species, and long-term predictions of repository performance are just some of the scientific problems facing modern society. This book, the nineteenth in a very successful series from MRS, offers an international and interdisciplinary perspective on the issues, and features developments in both fundamental and applied areas. Topics include: excess plutonium dispositioning; spent nuclear fuel; glass waste forms; ceramic and crystalline waste forms; cement waste forms; waste processing; waste container materials; speciation and sorption; bentonite barriers; flow and transport; repository site characterization; natural analogs and performance assessment.
| Author | : Louis J. Terminello |
| Publisher | : |
| Total Pages | : 282 |
| Release | : 1996-12-03 |
| Genre | : Technology & Engineering |
| ISBN | : |
As third-generation synchrotron facilities are constructed and go online in both the United States and around the world, increasingly more applications of synchrotron radiation will be realized. Both basic and applied research possibilities are manyfold, and include studies of solid surfaces and interfaces, electronic materials, metal oxides, glasses, thin films, superconductors, polymers, alloys, multilayer metal systems and intermetallic compounds. In addition, the combination of synchrotron-based spectroscopic techniques, with ever increasing high-resolution microscopy, allows researchers to study very small domains of materials in an attempt to understand their chemical and electronic properties. This book from MRS focuses on the various types of information that can be obtained from synchrotron-related techniques in order to expand the use of this unique and powerful experimental approach to materials research. Topics include: structure of reduced dimensional materials; magnetic materials; microscopy, topography and tomography; X-ray probes of solids; and materials characterization with X-ray absorption.
| Author | : Eric D. Jones |
| Publisher | : |
| Total Pages | : 450 |
| Release | : 1996-07-02 |
| Genre | : Technology & Engineering |
| ISBN | : |
While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.
| Author | : R. J. Shul |
| Publisher | : |
| Total Pages | : 480 |
| Release | : 1996-10-14 |
| Genre | : Technology & Engineering |
| ISBN | : |
III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.
| Author | : Stella W. Pang |
| Publisher | : |
| Total Pages | : 616 |
| Release | : 1996-03-18 |
| Genre | : Technology & Engineering |
| ISBN | : |
The fabrication of Si- and compound semiconductor-based devices involves a number of steps ranging from material growth to pattern definition by lithography, and ultimately, pattern transfer by etching/deposition. The key to device manufacturing, however, is reproducibility, low cost and high yield. Diagnostic techniques allow correlation between processing and actual device performance to be established. Researchers from universities, industry and government come together in this book to examine the advances in diagnostic techniques that provide critical information on structural, optical and electrical properties of semiconductor devices, as well as monitoring techniques for equipment/processes for control and feedback. The overriding goal is for rapid, accurate materials characterization, both in situ and ex situ. Topics include: in situ diagnostics; proximal probe microscopies; optical probes of devices and device properties; spectroscopic ellipsometry/structural diagnostics; and material analysis - X-ray techniques, strain measurements and passivation.
| Author | : William F. Filter |
| Publisher | : |
| Total Pages | : 616 |
| Release | : 1996-11-18 |
| Genre | : Technology & Engineering |
| ISBN | : |
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
