Improved Gallium Nitride And Aluminum Nitride Electronic Materials
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| Author | : M Razeghi |
| Publisher | : Elsevier |
| Total Pages | : 602 |
| Release | : 2004 |
| Genre | : Science |
| ISBN | : 9780080444260 |
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
| Author | : Stephen J. Pearton |
| Publisher | : Springer |
| Total Pages | : 0 |
| Release | : 2010-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 9781849969659 |
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
| Author | : |
| Publisher | : |
| Total Pages | : 704 |
| Release | : 1995 |
| Genre | : Aeronautics |
| ISBN | : |
| Author | : Patrick Fay |
| Publisher | : Springer |
| Total Pages | : 308 |
| Release | : 2019-08-01 |
| Genre | : Technology & Engineering |
| ISBN | : 3030202089 |
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
| Author | : |
| Publisher | : ASM International |
| Total Pages | : 1234 |
| Release | : 1989-11-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9780871702852 |
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.
| Author | : Jian-Jang Huang |
| Publisher | : Woodhead Publishing |
| Total Pages | : 673 |
| Release | : 2014-02-14 |
| Genre | : Technology & Engineering |
| ISBN | : 0857099302 |
The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
| Author | : Marko Tadjer |
| Publisher | : Woodhead Publishing |
| Total Pages | : 498 |
| Release | : 2022-07-13 |
| Genre | : Technology & Engineering |
| ISBN | : 0128211059 |
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. - Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods - Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies - Touches on emerging, real-world applications for thermal management strategies in power electronics
| Author | : Reet Chaudhuri |
| Publisher | : Springer Nature |
| Total Pages | : 266 |
| Release | : 2022-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 3031171993 |
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
| Author | : Zhe Chuan Feng |
| Publisher | : World Scientific |
| Total Pages | : 477 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 1848162235 |
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
| Author | : Rüdiger Quay |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 492 |
| Release | : 2008-04-05 |
| Genre | : Technology & Engineering |
| ISBN | : 3540718923 |
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
