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| Author | : Hui Shao |
| Publisher | : |
| Total Pages | : 118 |
| Release | : 2007 |
| Genre | : |
| ISBN | : 9781109874815 |
Chapter 2 and 3 discuss two infrared heterojunction photodiodes at room temperature. Chapter 2 studies an InGaAsSb photodiode with a high detectivity and a 50% cutoff wavelength at 2.6mum. Chapter 3 describes a non-cryogenic InAsSb photodiode with a 50% cutoff wavelength at 4.3mum.
| Author | : |
| Publisher | : Elsevier |
| Total Pages | : 385 |
| Release | : 2011-05-03 |
| Genre | : Science |
| ISBN | : 0123813387 |
Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
| Author | : K. K. Choi |
| Publisher | : World Scientific |
| Total Pages | : 436 |
| Release | : 1997 |
| Genre | : Science |
| ISBN | : 9789810228729 |
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared managing.
| Author | : Antoni Rogalski |
| Publisher | : SPIE Press |
| Total Pages | : 464 |
| Release | : 2000 |
| Genre | : Science |
| ISBN | : 9780819436191 |
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
| Author | : V. Ryzhii |
| Publisher | : World Scientific |
| Total Pages | : 362 |
| Release | : 2003 |
| Genre | : Technology & Engineering |
| ISBN | : 9789812383082 |
Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
| Author | : Yanhua Wang |
| Publisher | : |
| Total Pages | : 292 |
| Release | : 1994 |
| Genre | : |
| ISBN | : |
In this dissertation three types of III-V semiconductor quantum well infrared photodetectors (QWIPs) have been developed for 3-5 um mid-wavelength infrared (MWIR) and 8-14 um long-wavelength infrared (LWIR) detection. they are (1) GaAs/AlGaAs, GaAs/InGaP bound to continuum (BTC) QWIPs and InGaAs/InAlAs bound to miniband (BTM) QWIP, (2) nomral-incidence type II indirect bandgap AlAs/AlGaAs QWIP, and (3) normal incidence p-type strained layer InGaAS/InAlAs and InGaAs/GaAs QWIPs. These QWIP structures were grown by the molecular beam epitaxy (MBE) technique, with the exception of the GaAs/InGaP QWIP, which was grown by the metal-organic chemical vapor deposition (MOCVD) technique. Detectivity ranging from 10^9 to 10^12 cm-\/Hz/W was obtained for these QWIPs at T=77 K. The BTC and BTM QWIPs exhibited both photoconductive (PC) an photvoltain (PV) dual-mode (DM) detection characteristics. the peak wavelengths for the GaAs/AlGaAs QWIP were found to be at 7.7um and 12 um. The peak wavelengths for the GaAs/InGaP QWIP were found to be at 6.0um and 8.2 um. the voltage tunable InGaAs/InAlAs QWIP showed a peak wavelength of 10 um with dual-mode operation. a normal-incidence type II indirect bandgap AlAs/AlGaAs QWIP grown on (110)GaAS substrate was developed, which shows a multicolor detection feature with peak response wavelengths occurred at 2.2, 2.7, 3.5, 4.8, 6.5, and 12.5 um. Extremely large photo-conductivity gains of 630 and 3200 at peak wavelengths of 3.5 and 2.2 um were obtained at Vb=3 and 6 V, respectively, while a broad spectral photoresponse with peak wavelength at 12.5 um was observed. A normal-incidence p-type tensile strained-layer InGaAs/InAlAs QWIP grown on InP substrate with an ultralow dark current density (about six orders of magnitude smaller than the standard GaAs/AlGaAs QWIP) was developed in this work. this QWIP has achieved background limited performance (BLIP) for T
| Author | : Farhad Radpour |
| Publisher | : |
| Total Pages | : 388 |
| Release | : 1995 |
| Genre | : Compound semiconductors |
| ISBN | : |
| Author | : Jie Liang |
| Publisher | : |
| Total Pages | : 67 |
| Release | : 2006 |
| Genre | : Infrared detectors |
| ISBN | : 9781109827330 |
Voltage tunable features of superlattice-coupled two stack QWIPs were investigated. Under different bias voltages the devices' photoresponse peak intensity shifted from 6.0 mum to 10.3 mum at T = 7 K. This peak was due to the bound-to-bound transitions from the different stacks.
| Author | : Harald Schneider |
| Publisher | : Springer |
| Total Pages | : 258 |
| Release | : 2006-10-18 |
| Genre | : Science |
| ISBN | : 3540363246 |
Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.
| Author | : Antonio Rogalski |
| Publisher | : CRC Press |
| Total Pages | : 900 |
| Release | : 2010-11-15 |
| Genre | : Science |
| ISBN | : 1420076728 |
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
