Ii Iv Compound Semiconductor Photovoltaic Materials Proceedings Of The Materials Research Society Symposium 16 20 April 2001 San Francisco California
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II-IV Compound Semiconductor Photovoltaic Materials: Volume 668
Author | : Robert Birkmire |
Publisher | : |
Total Pages | : 608 |
Release | : 2001-10-15 |
Genre | : Technology & Engineering |
ISBN | : |
This book focuses on materials issues related to Cu(In,Ga)(Se,S)2 and CdTe-based polycrystalline thin-film photovoltaic solar cells and related oxides and chalcogenides. Phase equilibrium and thermochemical kinetic aspects of the absorber layer formation of CdTe and Cu(In,Ga)(Se,S)2 are emphasized and several papers on micro-analytical analysis report on detailed structural properties of thin films. The use of flexible plastic or metal foil substrates as an alternative to glass is addressed in terms of solar-cell performance and limitations imposed by the nature of the substrates. Properties of defects and interfaces in CdTe and CIGSS are highlighted using electrical, optical, and micro-analytical tools. While film properties are correlated to device physics, controversy still exists on the detailed operation of both CdTe and CIGSS devices. Topics include: materials and synthesis; thin films on alternate substrates; defects; growth and junction formation; surfaces and interfaces and film and device characterization.
Compound Semiconductor Photovoltaics
Author | : Materials Research Society. Meeting |
Publisher | : |
Total Pages | : 512 |
Release | : 2003 |
Genre | : Technology & Engineering |
ISBN | : |
This volume focuses on basic and applied materials research related to compound semiconductors. Emphasis is on materials that are used, or have clear potential use, as thin films in solar cells and spin-off applications. Relevant materials include Cu(In, Ga, Al)(Se, S)2, MX (M = Zn and/or Cd; X = S, Se and/or Te), III-V photovoltaic materials, and transparent conducting oxides. Understanding fundamental materials limitations, real or perceived, are of particular interest. Highlights center on: materials-related prerequisites for high-efficiency thin-film solar cells; the dynamics of chemical treatment/etching of CdTe with emphasis on back contacting; high-resolution microanalysis of grain boundaries and surface chemistry and how they affect device performance; the role and significance of transparent conducting oxides in device performance; and the electronic structure of highly mismatched III-V alloy semiconductors.
Transport and Microstructural Phenomena in Oxide Electronics
Author | : David S. Ginley |
Publisher | : |
Total Pages | : 456 |
Release | : 2001 |
Genre | : Science |
ISBN | : |
Oxide materials are rapidly impacting a broad spectrum of optoelectronic applications, from energy conservation to communications and computer memory. Developing a better understanding of the relationships between transport and microstructural phenomena is critical to the continued evolution of these applications. This volume reports on new materials and improved growth of films, and offers a much deeper level of understanding of the key determinates affecting the electro-optical performance of oxide-based devices. Transparent conducting oxides (TCOs), with a focus on p-type materials, are highlighted. One of the most exciting results in the TCO area is the report of CulnO2, where the material was doped n-type with Sn4+ and p-type with Ca2+. This is the first proven TCO system where homojunctions should be possible. Ferroelectric materials are another family of materials emerging in the area of DRAM and frequency-agile microwave electronics. A number of papers focus on the methods of controlling the interfacial properties of ferroelectric materials such as BaSrTiO3 on a variety of substrates. A number of groups are approaching atomic-level control of interfaces, allowing for the deposition of high-quality materials on substrates as diverse as Si and MgO. Embedded strain from the growth process for ferroelectric materials and other oxide systems is also demonstrated to be a critical determinate of the film. And a new model for ferroelectric materials indicates that a nanopolar reorientation transition may be responsible for the marked increase in dielectric tuning for nonstressed films. Topics include: transparent conducting oxides; transport and microstructural phenomena in oxide electronics; oxide-based devices; ferroelectric materials; and oxide thin-film growth.
Thin-Film Compound Semiconductor Photovoltaics: Volume 865
Author | : Materials Research Society. Meeting |
Publisher | : |
Total Pages | : 580 |
Release | : 2005-11-09 |
Genre | : Technology & Engineering |
ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.