Hydrogenated Amorphous Silicon
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Author | : R. A. Street |
Publisher | : Cambridge University Press |
Total Pages | : 432 |
Release | : 2005-09-08 |
Genre | : Technology & Engineering |
ISBN | : 9780521019347 |
Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.
Author | : R. A. Street |
Publisher | : Cambridge University Press |
Total Pages | : 433 |
Release | : 1991-08-30 |
Genre | : Science |
ISBN | : 0521371562 |
This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material.
Author | : R. A. Street |
Publisher | : Cambridge University Press |
Total Pages | : 432 |
Release | : 1991-08-30 |
Genre | : Technology & Engineering |
ISBN | : 9780521371568 |
Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.
Author | : Arvind Shah |
Publisher | : EPFL Press |
Total Pages | : 472 |
Release | : 2010-08-19 |
Genre | : Technology & Engineering |
ISBN | : 9781420066746 |
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.
Author | : Deren Yang |
Publisher | : Springer |
Total Pages | : 0 |
Release | : 2019-11-28 |
Genre | : Technology & Engineering |
ISBN | : 9783662564714 |
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Author | : Robert A. Street |
Publisher | : Springer Science & Business Media |
Total Pages | : 429 |
Release | : 2013-06-29 |
Genre | : Technology & Engineering |
ISBN | : 3662041413 |
This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Author | : Wilfried G. J. H. M. van Sark |
Publisher | : Springer Science & Business Media |
Total Pages | : 588 |
Release | : 2011-11-16 |
Genre | : Technology & Engineering |
ISBN | : 3642222757 |
Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.
Author | : G. Di Francia |
Publisher | : Springer Nature |
Total Pages | : 411 |
Release | : 2020-02-21 |
Genre | : Technology & Engineering |
ISBN | : 3030375587 |
This book showcases the state of the art in the field of sensors and microsystems, revealing the impressive potential of novel methodologies and technologies. It covers a broad range of aspects, including: bio-, physical and chemical sensors; actuators; micro- and nano-structured materials; mechanisms of interaction and signal transduction; polymers and biomaterials; sensor electronics and instrumentation; analytical microsystems, recognition systems and signal analysis; and sensor networks, as well as manufacturing technologies, environmental, food and biomedical applications. The book gathers a selection of papers presented at the 20th AISEM National Conference on Sensors and Microsystems, held in Naples, Italy in February 2019, the event brought together researchers, end users, technology teams and policy makers.
Author | : Thomas Mueller |
Publisher | : Logos Verlag Berlin GmbH |
Total Pages | : 280 |
Release | : 2009 |
Genre | : Technology & Engineering |
ISBN | : 3832522913 |
The main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers, and the sufficient surface passivation of all interfaces. In heterojunction solar cells, the a-Si: H/c-Si hetero-interface is of significant importance, since the hetero-interface characteristics directly affect the junction properties and thus solar cell efficiency. In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC: H, a-SiO_x: H, and muc-Si: H (standard a-Si: H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiO_x: H), and (ii) the influence of wide-gap high-quality a-Si- and muc-Si-based alloys for use as emitter and back-surface-
Author | : |
Publisher | : Newnes |
Total Pages | : 3572 |
Release | : 2011-01-28 |
Genre | : Science |
ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts