Hot Carriers in Semiconductors

Hot Carriers in Semiconductors
Author: FERRY
Publisher: IOP Publishing Limited
Total Pages: 350
Release: 2021-12-24
Genre: Technology & Engineering
ISBN: 9780750339452

This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.

Hot-Electron Transport in Semiconductors

Hot-Electron Transport in Semiconductors
Author: L. Reggiani
Publisher: Springer Science & Business Media
Total Pages: 288
Release: 2006-01-20
Genre: Technology & Engineering
ISBN: 3540388494

Hot-Electron Transport in Semiconductors (Topics in Applied Physics).

Hot Carriers in Semiconductors

Hot Carriers in Semiconductors
Author: Karl Hess
Publisher: Springer Science & Business Media
Total Pages: 575
Release: 2012-12-06
Genre: Science
ISBN: 1461304016

This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Physics of Hot Electron Transport in Semiconductors

Physics of Hot Electron Transport in Semiconductors
Author: Chin Sen Ting
Publisher: World Scientific
Total Pages: 336
Release: 1992
Genre: Science
ISBN: 9789810210083

This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Hot Carriers in Semiconductors

Hot Carriers in Semiconductors
Author: J. Shah
Publisher: Elsevier
Total Pages: 532
Release: 2013-10-22
Genre: Technology & Engineering
ISBN: 148328686X

A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.

Hot Carriers in Semiconductor Nanostructures

Hot Carriers in Semiconductor Nanostructures
Author: Jagdeep Shah
Publisher: Elsevier
Total Pages: 525
Release: 2012-12-02
Genre: Science
ISBN: 0080925707

Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. - Topics covered include - Reduced dimensionality and quantum wells - Carrier-phonon interactions and hot phonons - Femtosecond optical studies of hot carrier - Ballistic transport - Submicron and resonant tunneling devices

Hot Electrons in Semiconductors

Hot Electrons in Semiconductors
Author: N. Balkan
Publisher:
Total Pages: 536
Release: 1998
Genre: Science
ISBN: 9780198500582

Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Advanced Concepts in Photovoltaics

Advanced Concepts in Photovoltaics
Author: Arthur J. Nozik
Publisher: Royal Society of Chemistry
Total Pages: 631
Release: 2014-07-10
Genre: Science
ISBN: 1849739951

Photovoltaic systems enable the sun’s energy to be converted directly into electricity using semiconductor solar cells. The ultimate goal of photovoltaic research and development is to reduce the cost of solar power to reach or even become lower than the cost of electricity generated from fossil and nuclear fuels. The power conversion efficiency and the cost per unit area of the phototvoltaic system are critical factors that determine the cost of photovoltaic electricity. Until recently, the power conversion efficiency of single-junction photovoltaic cells has been limited to approximately 33% - the so-called Shockley-Queisser limit. This book presents the latest developments in photovoltaics which seek to either reach or surpass the Shockley-Queisser limit, and to lower the cell cost per unit area. Progress toward this ultimate goal is presented for the three generations of photovoltaic cells: the 1st generation based on crystalline silicon semiconductors; the 2nd generation based on thin film silicon, compound semiconductors, amorphous silicon, and various mesoscopic structures; and the 3rd generation based on the unique properties of nanoscale materials, new inorganic and organic photoconversion materials, highly efficient multi-junction cells with low cost solar concentration, and novel photovoltaic processes. The extent to which photovoltaic materials and processes can meet the expectations of efficient and cost effective solar energy conversion to electricity is discussed. Written by an international team of expert contributors, and with researchers in academia, national research laboratories, and industry in mind, this book is a comprehensive guide to recent progress in photovoltaics and essential for any library or laboratory in the field.

Physics of Nonlinear Transport in Semiconductors

Physics of Nonlinear Transport in Semiconductors
Author: David K. Ferry
Publisher: Springer Science & Business Media
Total Pages: 620
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1468436384

The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

Semiconductor Physics

Semiconductor Physics
Author: Karlheinz Seeger
Publisher: Springer Science & Business Media
Total Pages: 476
Release: 2013-06-29
Genre: Technology & Engineering
ISBN: 3662023512

The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.