High-Resolution X-Ray Scattering

High-Resolution X-Ray Scattering
Author: Ullrich Pietsch
Publisher: Springer Science & Business Media
Total Pages: 410
Release: 2013-03-09
Genre: Technology & Engineering
ISBN: 1475740506

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

X-ray Scattering from Semiconductors

X-ray Scattering from Semiconductors
Author: Paul F. Fewster
Publisher: World Scientific
Total Pages: 303
Release: 2000
Genre: Science
ISBN: 1860941591

X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, and more.

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Newnes
Total Pages: 829
Release: 2013-04-11
Genre: Technology & Engineering
ISBN: 044459549X

Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Elsevier
Total Pages: 501
Release: 2011-08-11
Genre: Science
ISBN: 0080558151

In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

High Resolution X-ray Scattering and Diffraction

High Resolution X-ray Scattering and Diffraction
Author:
Publisher:
Total Pages:
Release: 1983
Genre:
ISBN:

In the general class of high resolution x-ray scattering studies experiments one analyzes the distribution of photon energies and wave vectors resulting from illumination of a sample with collimated monochromatic radiation. Applications abound in the field of structural physics, which may be described as the study of structures for their intrinsic physical interest. This includes studies of novel states of matter, phase transitions, and dynamics. As both the wave vector and the energy of scattered photons are of interest, one may conceptually divide high resolution experimental setups for this work into two classes: those with high Q-resolution (momemtum transfer analysis) and those with high E-resolution (energy transfer analysis). The former class is exemplified by the existing experimental station on SSRL wiggler experimental station VII-2 and the proposed high Q-resolution wiggler station for NSLS Phase II. The latter class is dependent on extremely high flux, as discussed more fully below, and the possibility of constructing a high E-resolution scattering station fed by an x-ray undulator is one of the exciting opportunities presented by the proposed construction of a 6 GeV storage ring.

ISTFA 2012

ISTFA 2012
Author: ASM International
Publisher: ASM International
Total Pages: 643
Release: 2012
Genre: Technology & Engineering
ISBN: 1615039953