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| Author | : Fazal Ali |
| Publisher | : Artech House Microwave Library |
| Total Pages | : 404 |
| Release | : 1991 |
| Genre | : Technology & Engineering |
| ISBN | : |
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
| Author | : Robert Anholt |
| Publisher | : Artech House Microwave Library |
| Total Pages | : 338 |
| Release | : 1995 |
| Genre | : Science |
| ISBN | : |
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
| Author | : Vassil Palankovski |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 309 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 3709105609 |
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
| Author | : William Liu |
| Publisher | : Wiley-Interscience |
| Total Pages | : 0 |
| Release | : 1999-04-07 |
| Genre | : Technology & Engineering |
| ISBN | : 9780471297000 |
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types
| Author | : Jianjun Gao |
| Publisher | : John Wiley & Sons |
| Total Pages | : 394 |
| Release | : 2015-04-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1118921550 |
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
| Author | : J. Doneker |
| Publisher | : Routledge |
| Total Pages | : 552 |
| Release | : 2017-11-22 |
| Genre | : Science |
| ISBN | : 1351456466 |
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
| Author | : D. W. Faulkner |
| Publisher | : IOS Press |
| Total Pages | : 244 |
| Release | : 2000 |
| Genre | : Computers |
| ISBN | : 9781586030667 |
Volume 1 WDM and Photonic Networks will focus on recent developments in long-haul WDM and photonic networks and will include invited papers from key vendors and technologists. A paper on DWDM by Lucent will show how Raman amplification enables the quadrupling of the line rate from OC-192 to OC-768 in a recent 1.6Tb/s experiment.
| Author | : Inder Bahl |
| Publisher | : John Wiley & Sons |
| Total Pages | : 696 |
| Release | : 2009-06-17 |
| Genre | : Technology & Engineering |
| ISBN | : 9780470462317 |
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
| Author | : Stephen A. Maas |
| Publisher | : Wiley-IEEE Press |
| Total Pages | : 508 |
| Release | : 1997 |
| Genre | : Technology & Engineering |
| ISBN | : |
This classic text is an excellent resource and time-saver for engineers who need to tackle troublesome nonlinear components that remain in use despite recent advances in microwave technology. NONLINEAR MICROWAVE CIRCUITS offers detailed, technically substantial coverage of key methods for the analysis, design, and optimization of nonlinear microwave circuits. Using minimal mathematics, it integrates in-depth, "readable" coverage of the underlying theories that guide these methods. This book is replete with valuable "how to" information on a wide range of topics.
| Author | : Jiann S. Yuan |
| Publisher | : Wiley-Interscience |
| Total Pages | : 496 |
| Release | : 1999-04-12 |
| Genre | : Technology & Engineering |
| ISBN | : |
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
