Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE)
Author: Stuart Irvine
Publisher: John Wiley & Sons
Total Pages: 582
Release: 2019-10-07
Genre: Technology & Engineering
ISBN: 1119313015

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Structural, Dielectric, and Optical Properties of Potassium Tantalate Niobate Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Structural, Dielectric, and Optical Properties of Potassium Tantalate Niobate Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Author: Barbara Michelle Nichols
Publisher:
Total Pages:
Release: 2000
Genre:
ISBN:

The structure-property relations of potassium tantalate niobate (KTaxNb1-xO 3) thin films have been investigated to assess their viability as nonlinear optical materials. Single phase, epitaxial films were deposited by low pressure metalorganic chemical vapor deposition over the entire solid solution range. Under optimized growth conditions, the composition of the films could be controlled within 5 atomic percent.

Optical Properties of Epitaxial PLT Thin Films

Optical Properties of Epitaxial PLT Thin Films
Author:
Publisher:
Total Pages:
Release: 2001
Genre:
ISBN:

Metalorganic chemical vapor deposition was used to prepare epitaxial or highly oriented PLT (Pb[sub 1-x]La[sub x]TiO[sub 3]) thin films with x= 0.21-0.34. The growth of PLT films resulted in 3-D epitaxial heterostructures on a (100) surface of both MgO and KTaO[sub 3] substrates. The PLT film grown on a KTaO[sub 3] (100) substrate has a significantly lower minimum channeling yield compared to that grown on the MgO (100) substrate because of the smaller lattice mismatch associated with KTaO[sub 3]. Thickness and refractive indices at 435-1523 nm were measured by prism coupling. Measured film thickness of 570 nm was in good agreement with that obtained from RBS. Refractive index of the PLT film is smaller than that of PbTiO[sub 3], and its difference at[lambda]= 632.8 nm is about 2.5%. Dispersion of the refractive index was well fitted by a Sellmeier dispersion formula.

Advances in Research and Development

Advances in Research and Development
Author:
Publisher: Academic Press
Total Pages: 331
Release: 1997-11-14
Genre: Technology & Engineering
ISBN: 0080542905

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.