Growth And Optical Properties Of 100 And 111b Inasp Inp Strained Quantum Wells
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Strained-Layer Quantum Wells and Their Applications
| Author | : M. O. Manasreh |
| Publisher | : CRC Press |
| Total Pages | : 606 |
| Release | : 1997-12-23 |
| Genre | : Science |
| ISBN | : 9789056995676 |
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Growth of Crystals
| Author | : E.I. Givargizov |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 205 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461505372 |
Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.
Quantum-Confined Stark Effect of InGaAsP Quantum Wells Grown on (110) InP Substrates
| Author | : K. Oe |
| Publisher | : |
| Total Pages | : 3 |
| Release | : 1992 |
| Genre | : |
| ISBN | : |
Quantum well structures show interesting optical properties associated with their remarkable exciton absorption resonances. In the quantum-confined Stark effect (QCSE), electric fields applied perpendicular to quantum well (QW) layers can shift the optical absorption edge to lower photon energies with the exciton absorption peaks remaining clearly resolved. This effect has been studied extensively as it is useful in optical modulation and photonic switching applications. At this time, most QCSE studies concentrate on the (100) orientation or, in a few cases, on (111) strained QWs to obtain a blue shift originating from piezoelectric built-in potentials. The (110)-oriented QWs are expected to exhibit peculiar characteristics as the lower symmetry of the quantum-confined direction results in in-plane polarization anisotropy of the optical transitions. Anisotropic properties are reported in GaAs/AlGaAs (110)-oriented QWs. It is believed that strained QWs on (110) substrates will also generate in-plane piezoelectric fields which will provide bi-refringence for light propagating along the MQW growth axis.
