Growth And Characterization Of Isotopically Enriched 7ge And 74ge Single Crystals
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Author | : |
Publisher | : Academic Press |
Total Pages | : 458 |
Release | : 2015-06-08 |
Genre | : Technology & Engineering |
ISBN | : 0128019409 |
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Author | : |
Publisher | : |
Total Pages | : 1096 |
Release | : 1975-04 |
Genre | : Nuclear energy |
ISBN | : |
Author | : F. Sánches |
Publisher | : |
Total Pages | : |
Release | : 1992 |
Genre | : |
ISBN | : |
Author | : Filip Tuomisto |
Publisher | : Institution of Engineering and Technology |
Total Pages | : 601 |
Release | : 2019-10-21 |
Genre | : Technology & Engineering |
ISBN | : 1785616552 |
Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.
Author | : |
Publisher | : Academic Press |
Total Pages | : 541 |
Release | : 1999-05-05 |
Genre | : Science |
ISBN | : 0080525253 |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference
Author | : Elias Munoz Merino |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 183 |
Release | : 1994-02-02 |
Genre | : Technology & Engineering |
ISBN | : 3035706530 |
Donors in AlGaAs and Related Compounds
Author | : P. Balk |
Publisher | : Elsevier Publishing Company |
Total Pages | : 376 |
Release | : 1988 |
Genre | : Science |
ISBN | : |
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Author | : Friedhelm Bechstedt |
Publisher | : |
Total Pages | : 484 |
Release | : 1988 |
Genre | : Science |
ISBN | : |
Author | : W. Murray Bullis |
Publisher | : |
Total Pages | : 716 |
Release | : 1991 |
Genre | : Semiconductors |
ISBN | : |
Author | : Shaun C. Hendy |
Publisher | : AIP Conference Proceedings (Nu |
Total Pages | : 214 |
Release | : 2009-07-20 |
Genre | : Science |
ISBN | : |
The purpose of the conference was to promote international collaborations in the broad areas of advanced materials and nanotechnology, with a particular emphasis on new and emerging technologies. New research was presented by scientists from around the world, providing an up to date snapshot of progress in these fields.