Gettering And Defect Engineering In Semiconductor Technology Iii
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Author | : J.D. Murphy |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 513 |
Release | : 2013-10-07 |
Genre | : Technology & Engineering |
ISBN | : 3038262056 |
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Author | : M. Kittler |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 659 |
Release | : 1991-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035703019 |
Proceedings of the 4th International Conference on Gettering and Defect Engineering In Semiconductor Technology (GADEST '91), Frankfurt, Germany, October 1991
Author | : Martin Kittler |
Publisher | : Scitec Publications |
Total Pages | : 634 |
Release | : 1989 |
Genre | : Technology & Engineering |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 844 |
Release | : 2005 |
Genre | : Semiconductors |
ISBN | : |
Author | : S. Ashok |
Publisher | : |
Total Pages | : 1176 |
Release | : 1992 |
Genre | : Technology & Engineering |
ISBN | : |
Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Author | : Peter Pichler |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 492 |
Release | : 2015-10-23 |
Genre | : Technology & Engineering |
ISBN | : 3035700834 |
Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Author | : |
Publisher | : |
Total Pages | : 724 |
Release | : 2000 |
Genre | : Crystal growth |
ISBN | : |
Author | : Electrochemical Society. Meeting |
Publisher | : The Electrochemical Society |
Total Pages | : 720 |
Release | : 2000 |
Genre | : Science |
ISBN | : 9781566772846 |
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Author | : Jo Nijs |
Publisher | : CRC Press |
Total Pages | : 490 |
Release | : 2021-05-30 |
Genre | : Science |
ISBN | : 1000447790 |
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Author | : Peter Pichler |
Publisher | : Springer Science & Business Media |
Total Pages | : 576 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709105978 |
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.