Germanium Based Technologies
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| Author | : Cor Claeys |
| Publisher | : Elsevier |
| Total Pages | : 476 |
| Release | : 2011-07-28 |
| Genre | : Science |
| ISBN | : 008047490X |
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
| Author | : Cor Claeys |
| Publisher | : Springer |
| Total Pages | : 464 |
| Release | : 2018-08-13 |
| Genre | : Technology & Engineering |
| ISBN | : 3319939254 |
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
| Author | : David Louis Harame |
| Publisher | : The Electrochemical Society |
| Total Pages | : 1280 |
| Release | : 2006 |
| Genre | : Electronic apparatus and appliances |
| ISBN | : 1566775078 |
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
| Author | : Y. Shiraki |
| Publisher | : Elsevier |
| Total Pages | : 289 |
| Release | : 1993-02-18 |
| Genre | : Science |
| ISBN | : 0444596895 |
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
| Author | : Zhiqiang Li |
| Publisher | : Springer |
| Total Pages | : 71 |
| Release | : 2016-03-24 |
| Genre | : Technology & Engineering |
| ISBN | : 3662496836 |
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
| Author | : Niccolò Rinaldi |
| Publisher | : River Publishers |
| Total Pages | : 378 |
| Release | : 2018-03-15 |
| Genre | : Technology & Engineering |
| ISBN | : 8793519613 |
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
| Author | : David Harame |
| Publisher | : The Electrochemical Society |
| Total Pages | : 1136 |
| Release | : 2008 |
| Genre | : Electronic apparatus and appliances |
| ISBN | : 1566776562 |
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
| Author | : D. Nirmal |
| Publisher | : CRC Press |
| Total Pages | : 303 |
| Release | : 2021-12-10 |
| Genre | : Technology & Engineering |
| ISBN | : 1000475360 |
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
| Author | : Kirk-Othmer |
| Publisher | : John Wiley & Sons |
| Total Pages | : 1085 |
| Release | : 2007-03-23 |
| Genre | : Science |
| ISBN | : 0471484962 |
The fifth edition of the Kirk-Othmer Encyclopedia of Chemical Technology builds upon the solid foundation of the previous editions, which have proven to be a mainstay for chemists, biochemists, and engineers at academic, industrial, and government institutions since publication of the first edition in 1949. The new edition includes necessary adjustments and modernisation of the content to reflect changes and developments in chemical technology. Presenting a wide scope of articles on chemical substances, properties, manufacturing, and uses; on industrial processes, unit operations in chemical engineering; and on fundamentals and scientific subjects related to the field. The Encyclopedia describes established technology along with cutting edge topics of interest in the wide field of chemical technology, whilst uniquely providing the necessary perspective and insight into pertinent aspects, rather than merely presenting information. Set began publication in January 2004 Over 1000 articles More than 600 new or updated articles 27 volumes Reviews from the previous edition: "The most indispensable reference in the English language on all aspects of chemical technology...the best reference of its kind". —Chemical Engineering News, 1992 "Overall, ECT is well written and cleanly edited, and no library claiming to be a useful resource for chemical engineering professionals should be without it." —Nicholas Basta, Chemical Engineering, December 1992
| Author | : Ruben Lieten |
| Publisher | : ASP / VUBPRESS / UPA |
| Total Pages | : 175 |
| Release | : 2009-09 |
| Genre | : Technology & Engineering |
| ISBN | : 9054874856 |
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
