Gan Ain Inn And Related Materials
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| Author | : Stephen J. Pearton |
| Publisher | : CRC Press |
| Total Pages | : 724 |
| Release | : 2000-10-31 |
| Genre | : Science |
| ISBN | : 9789056996864 |
The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
| Author | : Stephen J. Pearton |
| Publisher | : CRC Press |
| Total Pages | : 556 |
| Release | : 2021-10-08 |
| Genre | : Science |
| ISBN | : 1000448428 |
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
| Author | : Martin Kuball |
| Publisher | : |
| Total Pages | : 896 |
| Release | : 2006-03-27 |
| Genre | : Science |
| ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
| Author | : Michael E. Levinshtein |
| Publisher | : John Wiley & Sons |
| Total Pages | : 220 |
| Release | : 2001-02-21 |
| Genre | : Technology & Engineering |
| ISBN | : 9780471358275 |
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 295 |
| Release | : 2004 |
| Genre | : Technology & Engineering |
| ISBN | : 9812388443 |
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
| Author | : |
| Publisher | : |
| Total Pages | : 538 |
| Release | : 1997 |
| Genre | : Electroluminescent devices |
| ISBN | : |
| Author | : Yukinobu Kumashiro |
| Publisher | : CRC Press |
| Total Pages | : 778 |
| Release | : 2000-08-24 |
| Genre | : Technology & Engineering |
| ISBN | : 9780203908181 |
An exploration of electric refractory materials, this book covers developments of blue light-emitting diodes using GaN-based nitrides for laser and high-temperature and -frequency devices. Electric Refractory Materials introduces growth and evaluation standards of films and bulk crystals, with consideration of band structure, surface electronic structure, and lattice vibrations. It also covers heat capacity and thermal conductivity, irradiation properties, and selective surfaces. Focusing on diamond material, the book examines its synthesis and characterization as well as its electrical, optical, and conductive properties. The book also discusses the use of silicon carbide, boron compounds, and other material used in electronic and light-emitting devices.
| Author | : David C. Jiles |
| Publisher | : CRC Press |
| Total Pages | : 443 |
| Release | : 2017-12-21 |
| Genre | : Technology & Engineering |
| ISBN | : 1482289369 |
Electronic materials provide the basis for many high tech industries that have changed rapidly in recent years. In this fully revised and updated second edition, the author discusses the range of available materials and their technological applications. Introduction to the Electronic Properties of Materials, 2nd Edition presents the principles of the behavior of electrons in materials and develops a basic understanding with minimal technical detail. Broadly based, it touches on all of the key issues in the field and offers a multidisciplinary approach spanning physics, electrical engineering, and materials science. It provides an understanding of the behavior of electrons within materials, how electrons determine the magnetic thermal, optical and electrical properties of materials, and how electronic properties are controlled for use in technological applications. Although some mathematics is essential in this area, the mathematics that is used is easy to follow and kept to an appropriate level for the reader. An excellent introductory text for undergraduate students, this book is a broad introduction to the topic and provides a careful balance of information that will be appropriate for physicists, materials scientists, and electrical engineers.
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 342 |
| Release | : 2006 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568352 |
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
| Author | : Stephen J. Pearton |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 402 |
| Release | : 2006-02-24 |
| Genre | : Technology & Engineering |
| ISBN | : 9781852339357 |
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
