Floating Gate Engineering For Novel Nonvolatile Flash Memories
Download Floating Gate Engineering For Novel Nonvolatile Flash Memories full books in PDF, epub, and Kindle. Read online free Floating Gate Engineering For Novel Nonvolatile Flash Memories ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
| Author | : Joe Brewer |
| Publisher | : John Wiley & Sons |
| Total Pages | : 766 |
| Release | : 2011-09-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1118211626 |
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
| Author | : Yan Zhu |
| Publisher | : |
| Total Pages | : 354 |
| Release | : 2007 |
| Genre | : Computer storage devices |
| ISBN | : |
| Author | : Kuniharu Takei |
| Publisher | : John Wiley & Sons |
| Total Pages | : 436 |
| Release | : 2018-06-11 |
| Genre | : Technology & Engineering |
| ISBN | : 3527341838 |
The book introduces flexible and stretchable wearable electronic systems and covers in detail the technologies and materials required for healthcare and medical applications. A team of excellent authors gives an overview of currently available flexible devices and thoroughly describes their physical mechanisms that enable sensing human conditions. In dedicated chapters, crucial components needed to realize flexible and wearable devices are discussed which include transistors and sensors and deal with memory, data handling and display. Additionally, suitable power sources based on photovoltaics, thermoelectric energy and supercapacitors are reviewed. A special chapter treats implantable flexible sensors for neural recording. The book editor concludes with a perspective on this rapidly developing field which is expected to have a great impact on healthcare in the 21st century.
| Author | : Hideto Hidaka |
| Publisher | : Springer |
| Total Pages | : 253 |
| Release | : 2017-09-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3319553062 |
This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.
| Author | : Paulo Cappelletti |
| Publisher | : Springer |
| Total Pages | : 540 |
| Release | : 1999-06-30 |
| Genre | : Technology & Engineering |
| ISBN | : 0792384873 |
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
| Author | : Paolo Pavan |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 139 |
| Release | : 2007-05-08 |
| Genre | : Computers |
| ISBN | : 1402026137 |
Floating Gate Devices: Operation and Compact Modeling focuses on standard operations and compact modeling of memory devices based on Floating Gate architecture. Floating Gate devices are the building blocks of Flash, EPROM, EEPROM memories. Flash memories, which are the most versatile nonvolatile memories, are widely used to store code (BIOS, Communication protocol, Identification code,) and data (solid-state Hard Disks, Flash cards for digital cameras,). The reader, who deals with Floating Gate memory devices at different levels - from test-structures to complex circuit design - will find an essential explanation on device physics and technology, and also circuit issues which must be fully understood while developing a new device. Device engineers will use this book to find simplified models to design new process steps or new architectures. Circuit designers will find the basic theory to understand the use of compact models to validate circuits against process variations and to evaluate the impact of parameter variations on circuit performances. Floating Gate Devices: Operation and Compact Modeling is meant to be a basic tool for designing the next generation of memory devices based on FG technologies.
| Author | : Rino Micheloni |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 582 |
| Release | : 2010-07-27 |
| Genre | : Technology & Engineering |
| ISBN | : 9048194318 |
Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.
| Author | : Arup Bhattacharyya |
| Publisher | : CRC Press |
| Total Pages | : 566 |
| Release | : 2017-07-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1351798316 |
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
| Author | : David J Dumin |
| Publisher | : World Scientific |
| Total Pages | : 281 |
| Release | : 2002-01-18 |
| Genre | : Technology & Engineering |
| ISBN | : 981448945X |
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
| Author | : Rino Micheloni |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 338 |
| Release | : 2008-06-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1402083912 |
Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.
