Fizika A

Fizika A
Author:
Publisher:
Total Pages: 898
Release: 1994
Genre: Physics
ISBN:

Nanomaterials

Nanomaterials
Author: Engg Kamakhya Prasad Ghatak
Publisher: Walter de Gruyter GmbH & Co KG
Total Pages: 484
Release: 2020-04-06
Genre: Science
ISBN: 3110659999

This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today’s research of optoelectronic materials and give an outlook to future studies.

NIST Serial Holdings

NIST Serial Holdings
Author: National Institute of Standards and Technology (U.S.)
Publisher:
Total Pages: 268
Release: 2002
Genre: Engineering
ISBN:

Emerging Trends in Terahertz Engineering and System Technologies

Emerging Trends in Terahertz Engineering and System Technologies
Author: Arindam Biswas
Publisher: Springer Nature
Total Pages: 227
Release: 2021-02-12
Genre: Science
ISBN: 9811597669

This book highlights emerging trends in terahertz engineering and system technologies, mainly, devices, advanced materials, and various applications in THz technology. It includes advanced topics such as terahertz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by use of machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, THZ imaging system for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics and the intended audience is both academic and professional.

Quantum Capacitance In Quantized Transistors

Quantum Capacitance In Quantized Transistors
Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
Total Pages: 886
Release: 2024-02-06
Genre: Science
ISBN: 9811279411

In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

Electron Statistics In Quantum Confined Superlattices

Electron Statistics In Quantum Confined Superlattices
Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
Total Pages: 790
Release: 2023-03-14
Genre: Science
ISBN: 9811263671

The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.

Dispersion Relations in Heavily-Doped Nanostructures

Dispersion Relations in Heavily-Doped Nanostructures
Author: Kamakhya Prasad Ghatak
Publisher: Springer
Total Pages: 664
Release: 2015-10-26
Genre: Technology & Engineering
ISBN: 3319210009

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Relativistic Forces in Special and General Relativity

Relativistic Forces in Special and General Relativity
Author: Adrian Sfarti
Publisher: Cambridge Scholars Publishing
Total Pages: 335
Release: 2021-12-20
Genre: Science
ISBN: 1527578526

This book presents a generalization of transforms from the frames co-moving with an accelerated particle for uniform circular or linear motion into an inertial frame of reference. The solutions presented here will be of great interest for real-time applications because earth-bound laboratories are inertial only in approximation. The motivation behind this is that real life applications include accelerating and rotating frames with arbitrary orientations more often than the idealized case of inertial frames. The book is divided into three main sections: the first deals with the theory of dynamics, while the second section deals with the application of theory to the derivation of the relativistic fictitious forces (Coriolis, centrifugal and Euler) occurring in a rotating frame and D’Alembert for a linearly accelerated frame. The third section deals with the Thomas Wigner effect. This is the first book on the subject and it will be of great interest for physics students, physics professors, and engineers.

Bulletin

Bulletin
Author: United States. Office of Education
Publisher:
Total Pages: 916
Release: 1940
Genre: Education
ISBN: