C,H,N and O in Si and Characterization and Simulation of Materials and Processes

C,H,N and O in Si and Characterization and Simulation of Materials and Processes
Author: A. Borghesi
Publisher: North Holland
Total Pages: 624
Release: 1996
Genre: Science
ISBN:

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Conceptual Foundations of Materials

Conceptual Foundations of Materials
Author:
Publisher: Elsevier
Total Pages: 245
Release: 2006-09-20
Genre: Science
ISBN: 0080464572

The goal of this Volume "Conceptual Foundations of Materials: A standard model for ground- and excited-state properties" is to present the fundamentals of electronic structure theory that are central to the understanding and prediction of materials phenomena and properties. The emphasis is on foundations and concepts. The Sections are designed to offer a broad and comprehensive perspective of the field. They cover the basic aspects of modern electronic structure approaches and highlight their applications to the structural (ground state, vibrational, dynamic and thermodynamic, etc.) and electronic (spectroscopic, dielectric, magnetic, transport, etc.) properties of real materials including solids, clusters, liquids, and nanostructure materials. This framework also forms a basis for studies of emergent properties arising from low-energy electron correlations and interactions such as the quantum Hall effects, superconductivity, and other cooperative phenomena. Although some of the basics and models for solids were developed in the early part of the last century by figures such as Bloch, Pauli, Fermi, and Slater, the field of electronic structure theory went through a phenomenal growth during the past two decades, leading to new concepts, understandings, and predictive capabilities for determining the ground- and excited-state properties of real, complex materials from first principles. For example, theory can now be used to predict the existence and properties of materials not previously realized in nature or in the laboratory. Computer experiments can be performed to examine the behavior of individual atoms in a particular process, to analyze the importance of different mechanisms, or just to see what happen if one varies the interactions and parameters in the simulation. Also, with ab initio calculations, one can determine from first principles important interaction parameters which are needed in model studies of complex processes or highly correlated systems. Each time a new material or a novel form of a material is discovered, electronic structure theory inevitably plays a fundamental role in unraveling its properties. - Provides the foundations of the field of condensed matter physics - An excellent supplementary text for classes on condensed matter physics/solid state physics - Volume covers current work at the forefront - Presentations are accessible to nonspecialists, with focus on underlying fundamentals

Physical Chemistry of Semiconductor Materials and Processes

Physical Chemistry of Semiconductor Materials and Processes
Author:
Publisher: John Wiley & Sons
Total Pages: 420
Release: 2015-10-12
Genre: Science
ISBN: 1118514572

The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Handbook of Nanophysics

Handbook of Nanophysics
Author: Klaus D. Sattler
Publisher: CRC Press
Total Pages: 718
Release: 2016-04-19
Genre: Science
ISBN: 1420075454

In the 1990s, nanoparticles and quantum dots began to be used in optical, electronic, and biological applications. Now they are being studied for use in solid-state quantum computation, tumor imaging, and photovoltaics. Handbook of Nanophysics: Nanoparticles and Quantum Dots focuses on the fundamental physics of these nanoscale materials and struct

Tuning Semiconducting and Metallic Quantum Dots

Tuning Semiconducting and Metallic Quantum Dots
Author: Christian von Borczyskowski
Publisher: CRC Press
Total Pages: 231
Release: 2017-03-27
Genre: Science
ISBN: 1315340968

Nanotechnology is one of the growing areas of this century, also opening new horizons for tuning optical properties. This book introduces basic tuning schemes, including those on a single quantum object level, with an emphasis on surface and interface manipulation of semiconducting and metallic quantum dots. There are two opposing demands in current forefront applications of quantum dots as optical labels, namely high luminescence stability (suppression of luminescence intermittency) and controllable intermittency and bleaching on a single-particle level to facilitate super-resolution optical microscopy (for which Eric Betzig, Stefan W. Hell, and William E. Moerner were awarded the 2014 Nobel Prize in Chemistry). The book discusses these contradictory demands with respect to both an understanding of the basic processes and applications. The chapters are a combination of scholarly presentation and comprehensive review and include case studies from the authors’ research, including unpublished results. Special emphasis is on a detailed understanding of spectroscopic and dynamic properties of semiconducting quantum dots. The book is suitable for senior undergraduates and researchers in the fields of optical nanoscience, materials science, and nanotechnology.

Molecular Dynamics

Molecular Dynamics
Author: Perla Balbuena
Publisher: Elsevier
Total Pages: 971
Release: 1999-04-22
Genre: Science
ISBN: 0080536840

The latest developments in quantum and classical molecular dynamics, related techniques, and their applications to several fields of science and engineering. Molecular simulations include a broad range of methodologies such as Monte Carlo, Brownian dynamics, lattice dynamics, and molecular dynamics (MD).Features of this book:• Presents advances in methodologies, introduces quantum methods and lists new techniques for classical MD• Deals with complex systems: biomolecules, aqueous solutions, ice and clathrates, liquid crystals, polymers• Provides chemical reactions, interfaces, catalysis, surface phenomena and solidsAlthough the book is not formally divided into methods and applications, the chapters are arranged starting with those that discuss new algorithms, methods and techniques, followed by several important applications.

Handbook of Crystal Growth

Handbook of Crystal Growth
Author: Tatau Nishinaga
Publisher: Elsevier
Total Pages: 1216
Release: 2014-11-04
Genre: Science
ISBN: 0444593764

Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space