Finfets And Other Multi Gate Transistors
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| Author | : J.-P. Colinge |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 350 |
| Release | : 2007-10-17 |
| Genre | : Technology & Engineering |
| ISBN | : 0387717528 |
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
| Author | : J.-P. Colinge |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 350 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 038771751X |
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
| Author | : J.-P. Colinge |
| Publisher | : Springer |
| Total Pages | : 0 |
| Release | : 2010-11-25 |
| Genre | : Technology & Engineering |
| ISBN | : 9781441944092 |
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
| Author | : Jean-Pierre Colinge |
| Publisher | : Cambridge University Press |
| Total Pages | : 269 |
| Release | : 2016-04-21 |
| Genre | : Science |
| ISBN | : 1107052408 |
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
| Author | : Yogesh Singh Chauhan |
| Publisher | : Academic Press |
| Total Pages | : 305 |
| Release | : 2015-03-17 |
| Genre | : Technology & Engineering |
| ISBN | : 0124200850 |
This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG
| Author | : Samar K. Saha |
| Publisher | : CRC Press |
| Total Pages | : 260 |
| Release | : 2020-07-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0429998082 |
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
| Author | : Jerry G. Fossum |
| Publisher | : Cambridge University Press |
| Total Pages | : 227 |
| Release | : 2013-08-29 |
| Genre | : Technology & Engineering |
| ISBN | : 1107434491 |
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
| Author | : K. Sivasankaran |
| Publisher | : Springer Nature |
| Total Pages | : 98 |
| Release | : 2023-03-27 |
| Genre | : Computers |
| ISBN | : 981990157X |
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
| Author | : Antonio García-Loureiro |
| Publisher | : |
| Total Pages | : 96 |
| Release | : 2021 |
| Genre | : |
| ISBN | : 9783039362097 |
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
| Author | : Dieter Lüst |
| Publisher | : Springer |
| Total Pages | : 364 |
| Release | : 1989-11-08 |
| Genre | : Computers |
| ISBN | : |
This book provides a self-contained introduction to string theory, at present one of the most exciting and fastest-growing areas in theoretical high-energy physics. Pedagogical in character, it introduces modern techniques and concepts, such as conformal and superconformal field theory, Kac-Moody algebras, etc., stressing their relevance and application to string theory rather than the formal aspects. The reader is led from a basic discussion of the classical bosonic string to the construction of four-dimensional heterotic string models, an area of current research. The so-called covariant lattice construction is discussed in detail. Being conceptually very simple, the book serves to exemplify the relevant features of other methods of arriving at four-dimensional string theories. It is also shown how one derives a low-energy field theory from string theory, thereby making contact with conventional point-particle physics.
