Ferroelectricity In Doped Hafnium Oxide
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| Author | : Uwe Schroeder |
| Publisher | : Woodhead Publishing |
| Total Pages | : 572 |
| Release | : 2019-03-27 |
| Genre | : Technology & Engineering |
| ISBN | : 0081024312 |
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
| Author | : Uwe Schroeder |
| Publisher | : Woodhead Publishing |
| Total Pages | : 0 |
| Release | : 2019-03-29 |
| Genre | : Technology & Engineering |
| ISBN | : 9780081024300 |
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
| Author | : Uwe Schroeder |
| Publisher | : Woodhead Publishing |
| Total Pages | : 0 |
| Release | : 2025-06-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9780443291821 |
The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, neuromorphic applications, IR sensors, energy storage and harvesting, and solid-state cooling. This book covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized. The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behaviour; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications
| Author | : Masanori Okuyama |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 272 |
| Release | : 2005-02-22 |
| Genre | : Computers |
| ISBN | : 9783540241638 |
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
| Author | : M. E. Lines |
| Publisher | : Oxford University Press |
| Total Pages | : 700 |
| Release | : 2001-02 |
| Genre | : Science |
| ISBN | : 9780198507789 |
This is a standard work on ferroelectrics.
| Author | : Byung-Eun Park |
| Publisher | : Springer Nature |
| Total Pages | : 421 |
| Release | : 2020-03-23 |
| Genre | : Technology & Engineering |
| ISBN | : 9811512124 |
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
| Author | : Robert Eason |
| Publisher | : John Wiley & Sons |
| Total Pages | : 754 |
| Release | : 2007-12-14 |
| Genre | : Science |
| ISBN | : 0470052112 |
Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
| Author | : Valeri V. Afanas'ev |
| Publisher | : Elsevier |
| Total Pages | : 404 |
| Release | : 2014-02-22 |
| Genre | : Science |
| ISBN | : 0080999301 |
The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
| Author | : Shriram Ramanathan |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 344 |
| Release | : 2009-12-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1441906649 |
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
| Author | : Liang-Yao Chen |
| Publisher | : Springer Nature |
| Total Pages | : 187 |
| Release | : 2021-08-23 |
| Genre | : Science |
| ISBN | : 9811634920 |
This book presents an overview of both the theory and experimental methods required to realize high efficiency solar absorber devices. It begins with a historical description of the study of spectrally selective solar absorber materials and structures based on optical principles and methods developed over the past few decades. The optical properties of metals and dielectric materials are addressed to provide the background necessary to achieve high performance of the solar absorber devices as applied in the solar energy field. In the following sections, different types of materials and structures, together with the relevant experimental methods, are discussed for practical construction and fabrication of the solar absorber devices, aiming to maximally harvest the solar energy while at the same time effectively suppressing the heat-emission loss. The optical principles and methods used to evaluate the performance of solar absorber devices with broad applications in different physical conditions are presented. The book is suitable for graduate students in applied physics, and provides a valuable reference for researchers working actively in the field of solar energy.
