Facilitating Emerging Non Volatile Memories In Next Generation Memory System Design
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| Author | : Yuan Xie |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 321 |
| Release | : 2013-10-21 |
| Genre | : Technology & Engineering |
| ISBN | : 144199551X |
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
| Author | : Krzysztof Iniewski |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 381 |
| Release | : 2010-08-09 |
| Genre | : Technology & Engineering |
| ISBN | : 9048192161 |
CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures. The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described. CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
| Author | : Seungbum Hong |
| Publisher | : Springer |
| Total Pages | : 280 |
| Release | : 2014-11-18 |
| Genre | : Technology & Engineering |
| ISBN | : 1489975373 |
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
| Author | : |
| Publisher | : |
| Total Pages | : 946 |
| Release | : 1978 |
| Genre | : Electronics |
| ISBN | : |
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : |
| Publisher | : |
| Total Pages | : 462 |
| Release | : 1978 |
| Genre | : Electronics |
| ISBN | : |
| Author | : Cyril Gavoille |
| Publisher | : Springer |
| Total Pages | : 515 |
| Release | : 2016-09-05 |
| Genre | : Computers |
| ISBN | : 3662534266 |
This book constitutes the proceedings of the 30th International Symposium on Distributed Computing, DISC 2016, held in Paris, France, in September 2016. The 32 full papers, 10 brief annoucements and 3 invited lectures presented in this volume were carefully reviewed and selected from 145 submissions.The focus of the conference is on following topics: theory, design, implementation, modeling, analysis, or application of distributed systems and networks.
| Author | : O. Auciello |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 482 |
| Release | : 1995-02-28 |
| Genre | : Technology & Engineering |
| ISBN | : 9780792333326 |
Electroceramic thin films hold out the promise of applications in entirely new generations of advanced microdevices that may revolutionise technology, creating multibillion dollar markets in the process. Less glamorous than the high-temperature superconductors, but probably just as important, are electrically conductive, ferroelectric, piezoelectric, pyroelectric, electro-optic, and magnetic films. The list of potential applications of films having these properties is virtually endless, but there are still some issues to be resolved before fully functioning devices reach the market. All these issues and more are discussed in Science and Technology of Electroceramic Thin Films, which provides one of the best, most up to date summaries of the field currently available.
| Author | : Rino Micheloni |
| Publisher | : Springer |
| Total Pages | : 391 |
| Release | : 2016-05-26 |
| Genre | : Computers |
| ISBN | : 9401775125 |
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
| Author | : Rino Micheloni |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 582 |
| Release | : 2010-07-27 |
| Genre | : Technology & Engineering |
| ISBN | : 9048194318 |
Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.
