Fabrication And Characterization Of Gallium Nitride Based Heterojunctions Etched By Photoelectrochemical Wet Etching
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| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 310 |
| Release | : 2004 |
| Genre | : Technology & Engineering |
| ISBN | : 9789812562364 |
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
| Author | : Stephen J. Pearton |
| Publisher | : CRC Press |
| Total Pages | : 556 |
| Release | : 2021-10-08 |
| Genre | : Science |
| ISBN | : 1000448428 |
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
| Author | : Matteo Meneghini |
| Publisher | : Springer |
| Total Pages | : 383 |
| Release | : 2016-09-08 |
| Genre | : Technology & Engineering |
| ISBN | : 3319431994 |
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
| Author | : |
| Publisher | : |
| Total Pages | : 2304 |
| Release | : 1997 |
| Genre | : Electrical engineering |
| ISBN | : |
| Author | : Perrin Walker |
| Publisher | : CRC Press |
| Total Pages | : 1434 |
| Release | : 1990-12-11 |
| Genre | : Science |
| ISBN | : 9781439822531 |
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
| Author | : Tsunenobu Kimoto |
| Publisher | : John Wiley & Sons |
| Total Pages | : 565 |
| Release | : 2014-11-24 |
| Genre | : Technology & Engineering |
| ISBN | : 1118313526 |
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
| Author | : Zhebo Chen |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 130 |
| Release | : 2013-08-28 |
| Genre | : Science |
| ISBN | : 1461482984 |
This book outlines many of the techniques involved in materials development and characterization for photoelectrochemical (PEC) – for example, proper metrics for describing material performance, how to assemble testing cells and prepare materials for assessment of their properties, and how to perform the experimental measurements needed to achieve reliable results towards better scientific understanding. For each technique, proper procedure, benefits, limitations, and data interpretation are discussed. Consolidating this information in a short, accessible, and easy to read reference guide will allow researchers to more rapidly immerse themselves into PEC research and also better compare their results against those of other researchers to better advance materials development. This book serves as a “how-to” guide for researchers engaged in or interested in engaging in the field of photoelectrochemical (PEC) water splitting. PEC water splitting is a rapidly growing field of research in which the goal is to develop materials which can absorb the energy from sunlight to drive electrochemical hydrogen production from the splitting of water. The substantial complexity in the scientific understanding and experimental protocols needed to sufficiently pursue accurate and reliable materials development means that a large need exists to consolidate and standardize the most common methods utilized by researchers in this field.
| Author | : R. K. Sharma |
| Publisher | : Springer |
| Total Pages | : 1260 |
| Release | : 2019-01-31 |
| Genre | : Technology & Engineering |
| ISBN | : 3319976044 |
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
| Author | : Harry O. Finklea |
| Publisher | : Elsevier Publishing Company |
| Total Pages | : 552 |
| Release | : 1988 |
| Genre | : Science |
| ISBN | : |
Semiconductors have been studied as electrodes in electrochemical systems since the mid-1950's. However, it was not until the 1970's that the search for alternative energy sources, especially solar energy, led to an enormous expansion in semiconductor electrode research. One attractive option for solar energy conversion is the semiconductor liquid-junction solar cell, which can be designed to produce either electrical power or fuel such as hydrogen. Consequently the number of papers published concerning semiconductor electrodes has rapidly increased. Previous books have principally focused on the underlying theory (largely from solid state physics) and principles of operation of all semiconductor electrodes. It therefore seemed both useful and appropriate to review the field with the intention of collating information for each semiconductor or family of semiconductors, with contributions from authors who are all recognized experts in their field. Each chapter is devoted to critically assessing the recent literature on a particular semiconductor or family of semiconductors.
| Author | : Zhong Lin Wang |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 254 |
| Release | : 2013-01-11 |
| Genre | : Technology & Engineering |
| ISBN | : 364234237X |
The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in 2007 and 2010, respectively. Due to the polarization of ions in a crystal that has non-central symmetry in materials, such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. Owing to the simultaneous possession of piezoelectricity and semiconductor properties, the piezopotential created in the crystal has a strong effect on the carrier transport at the interface/junction. Piezotronics is for devices fabricated using the piezopotential as a “gate” voltage to control charge carrier transport at a contact or junction. The piezo-phototronic effect uses the piezopotential to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detector, solar cell and LED. The functionality offered by piezotroics and piezo-phototronics are complimentary to CMOS technology. There is an effective integration of piezotronic and piezo-phototronic devices with silicon based CMOS technology. Unique applications can be found in areas such as human-computer interfacing, sensing and actuating in nanorobotics, smart and personalized electronic signatures, smart MEMS/NEMS, nanorobotics and energy sciences. This book introduces the fundamentals of piezotronics and piezo-phototronics and advanced applications. It gives guidance to researchers, engineers and graduate students.
