Enabling Technologies For 3 D Integration Volume 970
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| Author | : Christopher A. Bower |
| Publisher | : |
| Total Pages | : 320 |
| Release | : 2007-03-30 |
| Genre | : Computers |
| ISBN | : |
An emerging technology or device architecture called 3-D IC integration is based on the system performance gains that can be achieved by stacking and vertically interconnecting distinct device chips. The 3-D concept of replacing long 2-D interconnects with shorter vertical (3-D) interconnects has the potential to alleviate the well-known interconnect (RC) delay problem facing the semiconductor industry. Additional benefits of the 3-D concept for the IC maker include reduced die size and the ability to use distinct technologies (analog, logic, RF, etc...) on separate vertically interconnected layers. The 3-D concept, therefore, allows the integration of otherwise incompatible technologies, and offers significant advantages in performance, functionality, and form factor. Topics in this book include: fabrication of 3-D ICs; modeling, simulation and scaling of 3-D integrated devices; applications of 3-D integration; through wafer interconnects for 3-D packaging and interposer applications; bonding technology for 3-D integration; and enabling processes for 3-D integration.
| Author | : Philip Garrou |
| Publisher | : John Wiley & Sons |
| Total Pages | : 798 |
| Release | : 2011-09-22 |
| Genre | : Technology & Engineering |
| ISBN | : 352762306X |
The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.
| Author | : Cor L. Claeys |
| Publisher | : The Electrochemical Society |
| Total Pages | : 509 |
| Release | : 2007 |
| Genre | : Integrated circuits |
| ISBN | : 1566775728 |
The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.
| Author | : Chuan Seng Tan |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 365 |
| Release | : 2009-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0387765344 |
This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.
| Author | : Juan C. Nino |
| Publisher | : |
| Total Pages | : 184 |
| Release | : 2007-05-30 |
| Genre | : Technology & Engineering |
| ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, discusses advances, the current status, and future challenges in the broad area of materials integration for passive components and smart systems.
| Author | : |
| Publisher | : The Electrochemical Society |
| Total Pages | : 588 |
| Release | : 2008-10 |
| Genre | : Microelectromechanical systems |
| ISBN | : 1566776546 |
This issue of ECS Transactions on Semiconductor Wafer Bonding will cover the state-of-the-art R&D results of the last 2 years in the field of semiconductor wafer bonding technology. Wafer Bonding is an Enabling Technology that can be used to create novel composite materials systems and devices that would otherwise be unattainable. Wafer Bonding today is rapidly expanding into new applications in such diverse fields as photonics, sensors, MEMS. X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI) and Nanotechnologies.
| Author | : Dongkai Shangguan |
| Publisher | : CRC Press |
| Total Pages | : 549 |
| Release | : 2024-06-28 |
| Genre | : Technology & Engineering |
| ISBN | : 1040028691 |
In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.
| Author | : Banqiu Wu |
| Publisher | : McGraw Hill Professional |
| Total Pages | : 544 |
| Release | : 2011-07-07 |
| Genre | : Technology & Engineering |
| ISBN | : 007174195X |
The latest advances in three-dimensional integrated circuit stacking technology With a focus on industrial applications, 3D IC Stacking Technology offers comprehensive coverage of design, test, and fabrication processing methods for three-dimensional device integration. Each chapter in this authoritative guide is written by industry experts and details a separate fabrication step. Future industry applications and cutting-edge design potential are also discussed. This is an essential resource for semiconductor engineers and portable device designers. 3D IC Stacking Technology covers: High density through silicon stacking (TSS) technology Practical design ecosystem for heterogeneous 3D IC products Design automation and TCAD tool solutions for through silicon via (TSV)-based 3D IC stack Process integration for TSV manufacturing High-aspect-ratio silicon etch for TSV Dielectric deposition for TSV Barrier and seed deposition Copper electrodeposition for TSV Chemical mechanical polishing for TSV applications Temporary and permanent bonding Assembly and test aspects of TSV technology
| Author | : Vasudeva P. Atluri |
| Publisher | : |
| Total Pages | : 226 |
| Release | : 2007-04-09 |
| Genre | : Technology & Engineering |
| ISBN | : |
Microelectronic packaging architecture evolutions are being driven by silicon technology advancements and new form factors, used models and emerging technologies. High-performance mobile computer and communication systems will require higher I/O counts, greater density, lower cost, lighter weight and improved performance in the electronic package. The book focuses on silicon technology dimension scaling and performance improvement, Pb-free or 'green' assembly, and system-in-package (SIP) technologies. It explores the key thermomechanical failure modes and mitigating solutions associated with integration of silicon with weak interlayer dielectrics during the assembly process, under bump metallurgy integrity with lead-free assembly, and the impact of stress on die-cracking and transistor performance in 3D thin-die stacking. The interaction of these failures with silicon and assembly materials, processes and design features is covered and includes: system in package; advanced packaging/nanotechnology in packaging; physical behavior and mechanical behavior in packaging; electromigration and thermal behavior in packaging and thin films and adhesives in packaging.
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 224 |
| Release | : 2007-04-03 |
| Genre | : Technology & Engineering |
| ISBN | : |
High-pressure materials research has been revolutionized in the past few years due to technological breakthroughs in the diamond anvil cell (DAC), shock wave compression, and first-principles molecular dynamic simulation (MD) methods. Pressure-induced chemistry and high-pressure synthesis of superhard materials were topics of the successful Symposium DD, High-Pressure Materials Research, held at the 1997 MRS Fall Meeting in Boston. Since then, a plethora of discoveries have been made, including new materials synthesized under high pressure, geophysical-geochemical material conversion and ionization prior to polymerization of molecular solids. Additionally, new experimental and computational techniques, such as in situ studies of materials properties and transformations using laser heating are increasingly providing a deeper insight and a few surprises for the behavior and properties of matter at elevated pressure conditions. This book provides a timely report on progress in the field. Topics include: synthesis and characterization; disordered systems; dense molecular materials; and properties under extreme conditions.
