Electrical And Optical Properties Of Iii V Semiconductors
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Author | : Keh Yung Cheng |
Publisher | : Springer Nature |
Total Pages | : 537 |
Release | : 2020-11-08 |
Genre | : Technology & Engineering |
ISBN | : 3030519031 |
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author | : Sadao Adachi |
Publisher | : John Wiley & Sons |
Total Pages | : 342 |
Release | : 1992-11-10 |
Genre | : Science |
ISBN | : 9780471573296 |
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Author | : M.O. Manasreh |
Publisher | : Elsevier |
Total Pages | : 463 |
Release | : 2000-12-06 |
Genre | : Science |
ISBN | : 0080534449 |
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author | : N. G. Basov |
Publisher | : Springer |
Total Pages | : 132 |
Release | : 1978 |
Genre | : Science |
ISBN | : |
Author | : N. G. Basov |
Publisher | : |
Total Pages | : 126 |
Release | : 1978 |
Genre | : |
ISBN | : 9780608055473 |
Author | : Serge Oktyabrsky |
Publisher | : Springer Science & Business Media |
Total Pages | : 451 |
Release | : 2010-03-16 |
Genre | : Technology & Engineering |
ISBN | : 1441915478 |
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author | : Jianye Li |
Publisher | : Bentham Science Publishers |
Total Pages | : 186 |
Release | : 2011-09-09 |
Genre | : Technology & Engineering |
ISBN | : 1608050521 |
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Author | : S. V. Gaponenko |
Publisher | : Cambridge University Press |
Total Pages | : 263 |
Release | : 1998-10-28 |
Genre | : Science |
ISBN | : 0521582415 |
Examines the optical properties of low-dimensional semiconductor structures, a hot research area - for graduate students and researchers.
Author | : Sadao Adachi |
Publisher | : IET |
Total Pages | : 354 |
Release | : 1993 |
Genre | : Science |
ISBN | : 9780852965580 |
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author | : Jai Singh |
Publisher | : John Wiley & Sons |
Total Pages | : 667 |
Release | : 2020-01-07 |
Genre | : Science |
ISBN | : 111950631X |
Provides a semi-quantitative approach to recent developments in the study of optical properties of condensed matter systems Featuring contributions by noted experts in the field of electronic and optoelectronic materials and photonics, this book looks at the optical properties of materials as well as their physical processes and various classes. Taking a semi-quantitative approach to the subject, it presents a summary of the basic concepts, reviews recent developments in the study of optical properties of materials and offers many examples and applications. Optical Properties of Materials and Their Applications, 2nd Edition starts by identifying the processes that should be described in detail and follows with the relevant classes of materials. In addition to featuring four new chapters on optoelectronic properties of organic semiconductors, recent advances in electroluminescence, perovskites, and ellipsometry, the book covers: optical properties of disordered condensed matter and glasses; concept of excitons; photoluminescence, photoinduced changes, and electroluminescence in noncrystalline semiconductors; and photoinduced bond breaking and volume change in chalcogenide glasses. Also included are chapters on: nonlinear optical properties of photonic glasses; kinetics of the persistent photoconductivity in crystalline III-V semiconductors; and transparent white OLEDs. In addition, readers will learn about excitonic processes in quantum wells; optoelectronic properties and applications of quantum dots; and more. Covers all of the fundamentals and applications of optical properties of materials Includes theory, experimental techniques, and current and developing applications Includes four new chapters on optoelectronic properties of organic semiconductors, recent advances in electroluminescence, perovskites, and ellipsometry Appropriate for materials scientists, chemists, physicists and electrical engineers involved in development of electronic materials Written by internationally respected professionals working in physics and electrical engineering departments and government laboratories Optical Properties of Materials and Their Applications, 2nd Edition is an ideal book for senior undergraduate and postgraduate students, and teaching and research professionals in the fields of physics, chemistry, chemical engineering, materials science, and materials engineering.