He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge-Based Rf Mems

He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge-Based Rf Mems
Author: Rocco John Parro (III.)
Publisher:
Total Pages: 124
Release: 2010
Genre:
ISBN:

The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.

Defect Control in Semiconductors

Defect Control in Semiconductors
Author: K. Sumino
Publisher: Elsevier
Total Pages: 817
Release: 2012-12-02
Genre: Technology & Engineering
ISBN: 0444600647

Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.

ICO20

ICO20
Author: Wei Lu
Publisher: SPIE-International Society for Optical Engineering
Total Pages: 526
Release: 2006
Genre: Science
ISBN:

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Engineering Aspects of Shape Memory Alloys

Engineering Aspects of Shape Memory Alloys
Author: T W Duerig
Publisher: Butterworth-Heinemann
Total Pages: 512
Release: 2013-10-22
Genre: Technology & Engineering
ISBN: 1483144755

Engineering Aspects of Shape Memory Alloys provides an understanding of shape memory by defining terms, properties, and applications. It includes tutorials, overviews, and specific design examples—all written with the intention of minimizing the science and maximizing the engineering aspects. Although the individual chapters have been written by many different authors, each one of the best in their fields, the overall tone and intent of the book is not that of a proceedings, but that of a textbook. The book consists of five parts. Part I deals with the mechanism of shape memory and the alloys that exhibit the effect. It also defines many essential terms that will be used in later parts. Part II deals primarily with constrained recovery, but to some extent with free recovery. There is an introductory paper which defines terms and principles, then several specific examples of products based on constrained recovery. Both Parts III and IV deal with actuators. Part III introduces engineering principles while Part IV presents several of the specific examples. Finally, Part V deals with superelasticity, with an introductory paper and then several specific examples of product engineering.

Annealing of Sputtered Beta Silicon Carbide

Annealing of Sputtered Beta Silicon Carbide
Author: Irvin Berman
Publisher:
Total Pages: 8
Release: 1974
Genre:
ISBN:

Using an RF sputtering and etching module silicon carbide was deposited upon the surface of (100) and (111) silicon, (111) (110) (100) tungsten, and (0001) alpha SiC. Almost all deposits were amorphous initially but after thermal annealing, the thin films on the (100) silicon and on (0001) alpha became single crystal layers. Silicodes of tungsten were formed on the tungsten substrates after annealing. (Author).