Oxide materials are rapidly impacting a broad spectrum of optoelectronic applications, from energy conservation to communications and computer memory. Developing a better understanding of the relationships between transport and microstructural phenomena is critical to the continued evolution of these applications. This volume reports on new materials and improved growth of films, and offers a much deeper level of understanding of the key determinates affecting the electro-optical performance of oxide-based devices. Transparent conducting oxides (TCOs), with a focus on p-type materials, are highlighted. One of the most exciting results in the TCO area is the report of CulnO2, where the material was doped n-type with Sn4+ and p-type with Ca2+. This is the first proven TCO system where homojunctions should be possible. Ferroelectric materials are another family of materials emerging in the area of DRAM and frequency-agile microwave electronics. A number of papers focus on the methods of controlling the interfacial properties of ferroelectric materials such as BaSrTiO3 on a variety of substrates. A number of groups are approaching atomic-level control of interfaces, allowing for the deposition of high-quality materials on substrates as diverse as Si and MgO. Embedded strain from the growth process for ferroelectric materials and other oxide systems is also demonstrated to be a critical determinate of the film. And a new model for ferroelectric materials indicates that a nanopolar reorientation transition may be responsible for the marked increase in dielectric tuning for nonstressed films. Topics include: transparent conducting oxides; transport and microstructural phenomena in oxide electronics; oxide-based devices; ferroelectric materials; and oxide thin-film growth.