Dielectrics for Nanosystems II

Dielectrics for Nanosystems II
Author: D. Misra
Publisher: The Electrochemical Society
Total Pages: 352
Release: 2006
Genre: Dielectrics
ISBN: 1566774381

This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Author: Zia Karim
Publisher: The Electrochemical Society
Total Pages: 546
Release: 2011-04-25
Genre: Science
ISBN: 1566778646

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing
Author: D. Misra
Publisher: The Electrochemical Society
Total Pages: 419
Release: 2008-05
Genre: Dielectrics
ISBN: 1566776279

This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

Fractional Kinetics In Solids: Anomalous Charge Transport In Semiconductors, Dielectrics And Nanosystems

Fractional Kinetics In Solids: Anomalous Charge Transport In Semiconductors, Dielectrics And Nanosystems
Author: Vladimir V Uchaikin
Publisher: World Scientific
Total Pages: 274
Release: 2012-11-16
Genre: Science
ISBN: 9814449601

The standard (Markovian) transport model based on the Boltzmann equation cannot describe some non-equilibrium processes called anomalous that take place in many disordered solids. Causes of anomality lie in non-uniformly scaled (fractal) spatial heterogeneities, in which particle trajectories take cluster form. Furthermore, particles can be located in some domains of small sizes (traps) for a long time. Estimations show that path length and waiting time distributions are often characterized by heavy tails of the power law type. This behavior allows the introduction of time and space derivatives of fractional orders. Distinction of path length distribution from exponential is interpreted as a consequence of media fractality, and analogous property of waiting time distribution as a presence of memory.In this book, a novel approach using equations with derivatives of fractional orders is applied to describe anomalous transport and relaxation in disordered semiconductors, dielectrics and quantum dot systems. A relationship between the self-similarity of transport, the Levy stable limiting distributions and the kinetic equations with fractional derivatives is established. It is shown that unlike the well-known Scher-Montroll and Arkhipov-Rudenko models, which are in a sense alternatives to the normal transport model, fractional differential equations provide a unified mathematical framework for describing normal and dispersive transport. The fractional differential formalism allows the equations of bipolar transport to be written down and transport in distributed dispersion systems to be described. The relationship between fractional transport equations and the generalized limit theorem reveals the probabilistic aspects of the phenomenon in which a dispersive to Gaussian transport transition occurs in a time-of-flight experiment as the applied voltage is decreased and/or the sample thickness increased. Recent experiments devoted to studies of transport in quantum dot arrays are discussed in the framework of dispersive transport models. The memory phenomena in systems under consideration are discussed in the analysis of fractional equations.It is shown that the approach based on the anomalous transport models and the fractional kinetic equations may be very useful in some problems that involve nano-sized systems. These are photon counting statistics of blinking single quantum dot fluorescence, relaxation of current in colloidal quantum dot arrays, and some others.

CRC Concise Encyclopedia of Nanotechnology

CRC Concise Encyclopedia of Nanotechnology
Author: Boris Ildusovich Kharisov
Publisher: CRC Press
Total Pages: 1203
Release: 2016-01-06
Genre: Science
ISBN: 1466580895

The CRC Concise Encyclopedia of Nanotechnology sets the standard against which all other references of this nature are measured. As such, it is a major resource for both skilled professionals and novices to nanotechnology.The book examines the design, application, and utilization of devices, techniques, and technologies critical to research at the

Physics and Technology of High-k Gate Dielectrics 4

Physics and Technology of High-k Gate Dielectrics 4
Author: Samares Kar
Publisher: The Electrochemical Society
Total Pages: 565
Release: 2006
Genre: Dielectrics
ISBN: 1566775035

This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Dynamical Analysis of Non-Fourier Heat Conduction and Its Application in Nanosystems

Dynamical Analysis of Non-Fourier Heat Conduction and Its Application in Nanosystems
Author: Yuan Dong
Publisher: Springer
Total Pages: 145
Release: 2015-10-14
Genre: Science
ISBN: 3662484854

This thesis studies the general heat conduction law, irreversible thermodynamics and the size effect of thermal conductivity exhibited in nanosystems from the perspective of recently developed thermomass theory. The derivation bridges the microscopic phonon Boltzmann equation and macroscopic continuum mechanics. Key concepts such as entropy production, temperature and the Onsager reciprocal relation are revisited in the case of non-Fourier heat conduction. Lastly, useful expressions are extracted from the picture of phonon gas dynamics and are used to successfully predict effective thermal conductivity in nanosystems.