Development Of Amorphous Silicon Carbide Films Deposited By Dual Precursor Pecvd In A Single Power Supply System For Use In Microbridge Based Electrostatic Actuators
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He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge-Based Rf Mems
Author | : Rocco John Parro (III.) |
Publisher | : |
Total Pages | : 124 |
Release | : 2010 |
Genre | : |
ISBN | : |
The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.
Hydrogenated Amorphous Silicon Carbide Prepared Using DC Saddle Field PECVD for Photovoltaic Applications
Author | : Cheng-Chieh Yang |
Publisher | : |
Total Pages | : 260 |
Release | : 2011 |
Genre | : |
ISBN | : 9780494765982 |
Hydrogenated amorphous silicon carbide (a-SiC:H) can provide exceptional surface passivation essential for high-efficiency crystalline silicon solar cells. This thesis reports on the fundamental study of a-SiC:H films deposited using a novel deposition technique, DC saddle field PECVD, in contrast to the conventional industrial use of RF-PECVD. The growth conditions were optimized and correlated with passivating, structural, and optical characteristics. The lifetime has a strong dependency on deposition temperature and improves by over two orders of magnitude as the temperature increases; the maximum lifetime achieved in this work reached 0.5 ms. In addition, the Tauc optical gap can be increased from 1.7 eV to 2.3 eV by varying the precursor gas mixture ratio. Post-deposition annealing experiments demonstrate thermal stability of the samples deposited at 250 °C and in some instances shows improvement in passivation quality by a factor of two with a one-step annealing treatment at 300 °C for 15 minutes.
MEMS Materials and Processes Handbook
Author | : Reza Ghodssi |
Publisher | : Springer Science & Business Media |
Total Pages | : 1211 |
Release | : 2011-03-18 |
Genre | : Technology & Engineering |
ISBN | : 0387473181 |
MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.
High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD.
Author | : |
Publisher | : |
Total Pages | : |
Release | : 2003 |
Genre | : |
ISBN | : |
Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H[sub 2], was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si, Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si, Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.
Micromanufacturing and Nanotechnology
Author | : Nitaigour P. Mahalik |
Publisher | : Springer Science & Business Media |
Total Pages | : 478 |
Release | : 2006-01-16 |
Genre | : Technology & Engineering |
ISBN | : 3540293396 |
Micromanufacturing and Nanotechnology is an emerging technological infrastructure and process that involves manufacturing of products and systems at the micro and nano scale levels. Development of micro and nano scale products and systems are underway due to the reason that they are faster, accurate and less expensive. Moreover, the basic functional units of such systems possesses remarkable mechanical, electronic and chemical properties compared to the macro-scale counterparts. Since this infrastructure has already become the prefered choice for the design and development of next generation products and systems it is now necessary to disseminate the conceptual and practical phenomenological know-how in a broader context. This book incorporates a selection of research and development papers. Its scope is the history and background, underlynig design methodology, application domains and recent developments.