Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems
Author: National Aeronautics and Space Adm Nasa
Publisher: Independently Published
Total Pages: 28
Release: 2018-09-25
Genre: Science
ISBN: 9781724003836

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentratio

Luminous Chemical Vapor Deposition and Interface Engineering

Luminous Chemical Vapor Deposition and Interface Engineering
Author: Hirotsugu Yasuda
Publisher: CRC Press
Total Pages: 840
Release: 2004-11-30
Genre: Science
ISBN: 1420030299

Providing in-depth coverage of the technologies and various approaches, Luminous Chemical Vapor Deposition and Interface Engineering showcases the development and utilization of LCVD procedures in industrial scale applications. It offers a wide range of examples, case studies, and recommendations for clear understanding of this innovative science.

Ionized Physical Vapor Deposition

Ionized Physical Vapor Deposition
Author:
Publisher: Academic Press
Total Pages: 268
Release: 1999-10-14
Genre: Science
ISBN: 008054293X

This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips.For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools.Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference.Key Features:The first comprehensive volume on ionized physical vapor depositionCombines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVDEmphasizes practical applications in the area of IC fabrication and interconnect technologyServes as a guide to select the most appropriate technology for any deposition application*This single source saves time and effort by including comprehensive information at one's finger tips*The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD*The numerous practical applications assist the working engineer to select and refine thin film processes