Defects In Insulating Materials - Proceedings Of The Xii International Conference (In 2 Volumes)

Defects In Insulating Materials - Proceedings Of The Xii International Conference (In 2 Volumes)
Author: O Kanert
Publisher: World Scientific
Total Pages: 1424
Release: 1993-06-18
Genre:
ISBN: 9814553468

The proceedings reflect the Twelfth International Conference on Defects in Insulating Materials, covering topics on point defects and extended defects including theory and computer simulation in various insulating materials, as well as applications in laser physics, imaging, data storage and radioactive waste disposal.

Defects in Insulating Materials

Defects in Insulating Materials
Author: G.E. Matthews
Publisher: Trans Tech Publications Ltd
Total Pages: 812
Release: 1997-01-14
Genre: Technology & Engineering
ISBN: 303570516X

This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses. Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Proceedings of the 13th International Conference on Defects in Insulating Materials

Proceedings of the 13th International Conference on Defects in Insulating Materials
Author: G. Eric Matthews
Publisher:
Total Pages: 824
Release: 1997
Genre: Technology & Engineering
ISBN:

This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the defects considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.

Point Defects in Semiconductors and Insulators

Point Defects in Semiconductors and Insulators
Author: Johann-Martin Spaeth
Publisher: Springer Science & Business Media
Total Pages: 508
Release: 2003-01-22
Genre: Technology & Engineering
ISBN: 9783540426950

The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.