Defect Studies In Low Temperature Grown Gaas
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Defects in Microelectronic Materials and Devices
Author | : Daniel M. Fleetwood |
Publisher | : CRC Press |
Total Pages | : 772 |
Release | : 2008-11-19 |
Genre | : Science |
ISBN | : 1420043773 |
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Semiconductor Materials for Optoelectronics and LTMBE Materials
Author | : J.P. Hirtz |
Publisher | : Elsevier |
Total Pages | : 365 |
Release | : 2016-07-29 |
Genre | : Science |
ISBN | : 1483290425 |
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Identification of Defects in Semiconductors
Author | : |
Publisher | : Academic Press |
Total Pages | : 449 |
Release | : 1998-10-27 |
Genre | : Science |
ISBN | : 008086449X |
GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Low Temperature (LT) GaAs and Related Materials: Volume 241
Author | : Gerald L. Witt |
Publisher | : |
Total Pages | : 320 |
Release | : 1992-07-15 |
Genre | : Technology & Engineering |
ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Defects in Semiconductors 18
Author | : Masashi Suezawa |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 2042 |
Release | : 1995-11-21 |
Genre | : Technology & Engineering |
ISBN | : 303570502X |
Proceedings of the 18th International Conference on Defects in Semiconductors (ICDS-18), Sendai, Japan, July 1995
Defect and Impurity Engineered Semiconductors and Devices III: Volume 719
Author | : S. Ashok |
Publisher | : |
Total Pages | : 522 |
Release | : 2002-08-09 |
Genre | : Technology & Engineering |
ISBN | : |
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Defects in Optoelectronic Materials
Author | : Kazumi Wada |
Publisher | : CRC Press |
Total Pages | : 426 |
Release | : 2022-09-16 |
Genre | : Science |
ISBN | : 100071599X |
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.